High-power broad-band superluminescent diode with low spectral modulation at 1.5-/spl mu/m wavelength

Song, Jiakun; Cho, S.H.; Han, Il Ki; Hu, Yiwen; Heim, P.J.S.; Johnson, F.G.; Stone, D.R.; Dagenais, M.

doi:10.1109/68.853499

Cited by 26 publications

(13 citation statements)

References 7 publications

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“…In general, SLDs requirements are high-output power, efficient coupling into single-mode fibers, and suppression of lasing due to the Fabry-Perot mode under high-output power operation. Several methods have been used to suppress lasing, such as a antireflection coating at one or two facets [5,6,11] , tilting the stripe with respect to the facets [6,7,14] , bending the stripe near the output facet or the rear facet [11,12,15,17] , window buried structure, and an unpumped absorbing region [5,8,9,10,13,14,16,18,19] .…”

Section: Introductionmentioning

confidence: 99%

“…In the past years, various structures of SLDs that emit at 0.8 [5][6][7][8] , 1.3 [9][10][11][12][13][14][15][16] , and 1.5 μm [17][18][19][20] wavelengths have been reported. In general, SLDs requirements are high-output power, efficient coupling into single-mode fibers, and suppression of lasing due to the Fabry-Perot mode under high-output power operation.…”

Section: Introductionmentioning

confidence: 99%

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High performance 1.3 μm InGaAsN superluminescent diodes

Zhang

et al. 2008

Sci. China Ser. E-Technol. Sci.

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High performance 1.3 μm InGaAsN superluminescent diodes (SLDs) were fabricated with Schottky contact. The structure was grown by metal organic chemical vapor deposition (MOCVD). Output power of 3 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum was 30 nm. The devices operated up to 100℃.InGaAsN, superluminescent diodes, Schottky contact

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High performance 1.3 μm InGaAsN superluminescent diodes

Zhang

et al. 2008

Sci. China Ser. E-Technol. Sci.

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“…For most of the applications, it is desirable to obtain high power output, wide spectral width and small spectral modulation. Various techniques such as tilting stripe geometry 3 , bent waveguide 4 , antireflection coatings 5 and absorption near one of the facets 6 have been used to suppress the Fabry-Perot spectral modulation. Some modifications to the structure have also been proposed to broaden the spectral width by redesigning the active region to be made up of asymmetric quantum wells (QWs) 7 and stacked twin active layers 8 through epigrowth.…”

Section: Introductionmentioning

confidence: 99%

Wide spectral width superluminescent diodes fabricated by quantum well intermixing

et al. 2003

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We report the performance and reliability of a 1500 nm superluminescent diode fabricated using a post-growth quantum well intermixing technique. The one-step impurity induced quantum well intermixing technique incorporating ion implantation through graded-thickness implant mask pattern is utilized here. By thermally diffusing the vacancies through the structure to the QW region, we can obtain a differential bandgap energy shift across the wafer by an amount directly related to the implant mask thickness. We use this effect to broaden the full-width half maximum of the superluminescent diode. Output powers of multiple milliwatts with full-width half maximum larger than 90 nm and spectral modulation better than 0.2 dB have been achieved from ridge waveguide multiple quantum well structure. The superluminescent diode is able to operate up to 85°C showing good uncooled operation. The true inherent superluminescent mode operation of the superluminescent diode with full-width half maximum increases along with the increment of the current injection is also discussed. Accelerated aging at continuous constant current has been carried out at 70°C, 85°C and 100°C. The life test shows a very positive result, demonstrating that this QWI technique is reliable for fabricating active devices.Keywords: Superluminescent diode, quantum well, quantum well intermixing, ion implantation, bandgap energy and InGaAs/InGaAsP.

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“…To achieve the wide bandwidth, we opted, in a collaboration with the University of California-Santa-Barbara, for a combination of quantum well intermixing and multiple die bonding. Other techniques use a dual QW design [57], multistate QWs [58], quantum dots [59] or use supercontinuum generation. The latter is discussed in paragraph 5.2.3, the others are difficult to design and optimize given their complex structure and only work well at specific drive currents.…”

Section: Superluminescent Ledsmentioning

confidence: 99%