High-power Cr^2+:ZnS saturable absorber passively Q-switched Ho:YAG ceramic laser and its application to pumping of a mid-IR OPO

Yao, Baoquan; Yuan, Jinhe; Li, Jiang; Dai, Tongyu; Duan, Xiaoming; Shen, Yingjie; Cui, Zheng; Pan, Yubai

doi:10.1364/ol.40.000348

Cited by 43 publications

(20 citation statements)

References 15 publications

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“…The pnictide based compounds of the type AXPn 2 (A: Zn and Cd; X: Si, Ge, and Sn; Pn: P, As, and Sb) possess significant importance. The compounds, ZnGeP 2 and CdSiP 2 , are promising materials for nonlinear optical applications, 12,13 and ZnSnP 2 is identified as a good material for solar cell applications. 14 The structural, electronic, and optical properties of these compounds are widely explored by experimentalist as well as theoreticians.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of zinc based pnictide semiconductors

Sreeparvathy

Kanchana

Vaitheeswaran

2016

Journal of Applied Physics

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We report a detailed first principles density functional calculations to understand the electronic structure and transport properties of Zn-based pnictides ZnXPn2 (X: Si, Ge, and Sn; Pn: P and As) and ZnSiSb2. The electronic properties calculated using Tran-Blaha modified Becke-Johnson functional reveals the semi-conducting nature, and the resulting band gaps are in good agreement with experimental and other theoretical reports. We find a mixture of heavy and light bands in the band structure which is an advantage for good thermoelectric (TE) properties. The calculated transport properties unveils the favour p-type conduction in ZnXP2 (X: Si, Ge, and Sn) and n-type conduction in ZnGeP2 and ZnSiAs2. Comparison of transport properties of Zn-based pnictides with the prototype chalcopyrite thermoelectric materials implies that the thermopower values of the investigated compounds to be higher when compared with the prototype chalcopyrite thermoelectric materials, together with the comparable values for electrical conductivity scaled by relaxation time. In addition to this, Zn-based pnictides are found to possess higher thermopower than well known traditional TE materials at room temperature and above which motivates further research in these compounds.

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Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of zinc based pnictide semiconductors

Sreeparvathy

Kanchana

Vaitheeswaran

2016

Journal of Applied Physics

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“…Solid‐state lasers based on 5 I 7 → 5 I 8 transition of Ho 3+ ions operate in 2 μm eye‐safe spectral range and have significant applications in optical communication, laser ranging, laser surgery, and mid‐IR generation via pumping optical parametric oscillator lasers . For the past few years, Ho 3+ ‐doped yttrium aluminum garnet (YAG) has been intensively studied . Ho:Lu 3 Al 5 O 12 (LuAG) is another kind of garnet sharing the same structure of Ho:YAG, which can be obtained by replacing Y with Lu in the dodecahedral sites.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] For the past few years, Ho 3+doped yttrium aluminum garnet (YAG) has been intensively studied. [5][6][7][8] Ho:Lu 3 Al 5 O 12 (LuAG) is another kind of garnet sharing the same structure of Ho:YAG, which can be obtained by replacing Y with Lu in the dodecahedral sites. Spectroscopy studies have shown that Ho:LuAG possesses a lower thermal occupation of lower laser levels, which is beneficial for laser operating at~2.1 lm.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline Ho: LuAG laser ceramics: Fabrication, microstructure, and optical characterization

Xie

et al. 2017

J Am Ceram Soc

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Ho:Lu3Al5O12(LuAG) transparent ceramics are potential 2 μm eye‐safe laser materials. Polycrystalline 0.8 at.% Ho:LuAG ceramics with high optical quality were successfully fabricated by solid‐state reactive sintering of high‐purity oxide powders. The microstructure, the optical transmission, the spectrum characteristic, and the laser performance were investigated in this paper. The average grain size of Ho:LuAG ceramics vacuum sintered at 1830°C for 30 hour is about 14 μm. The in‐line transmittance of the sample is measured to be 81.7% and 82.0% at 1000 and 2250 nm, respectively. The absorption and the emission cross sections are calculated to be 0.88 × 10−20 cm2 at 1906 nm and 1.26 × 10−20 cm2 at 2094 nm. Using a thulium‐doped yttrium‐lithium‐fluoride (Tm:YLF) laser with the central wavelength of 1907.5 nm as the pump source, 2.67 W continuous wave (CW) laser operation at 2100.74 nm was obtained with a slope efficiency of 26.5%. The beam quality factor M2 was calculated to be 1.1, which indicated nearly diffraction‐limited beam propagation and the laser was the fundamental TEM00 Gaussian mode.

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“…Divalent Cr or Fe doped II-VI media such as Cr 2+ :ZnSe, Cr 2+ :ZnS, Cr 2+ :CdSe, Fe 2+: ZnS, and Fe 2+ :ZnSe have ultrabroad absorption bands which extend to 2.3 µm and hence can potentially be used as saturable absorbers at this wavelength [10][11][12]. Our present study focused on the passive Q-switching applications of Cr 2+ :ZnSe, whose saturation characteristics were previously investigated between 1.5 μm and 2.8 μm [13][14][15].…”

Section: Introductionmentioning

confidence: 99%