High Power, Electron-Beam Induced Switching in Diamond

Abstract

We are developing a high voltage, high average power, electron-beam controlled diiamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 k'V, and with high efficiency. This performance is due to the excelknt thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchamel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beam energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.

Prepulse minimization in KALI-5000

“…Whereas reducing the Blumlein inductor value beyond a certain limit introduces a droop in the output pulse shape. 5 Hence the ratio K has been increased by putting an additional inductor in the Marx generator's chamber. Initially the ratio K is equal to 2 and the operating point "A" is shown in Fig.…”

“…Most of the literature pertaining to prepulse minimization employs this technique to reduce the prepulse. [4][5][6][7] Prepulse reduction in these papers was mainly realized by altering the capacitive coupling between the prepulse switch and output diode, i.e., either by reducing the prepulse switch capacitance 5,7 or by increasing the diode capacitance. 4 A water dielectric based switch is preferred for obtaining fast rise time, but in case of prepulse switches, to minimize its capacitance water dielectric is not used.…”