The thermal behaviour of high-power GaAIAs/GaAs laser arrays is described by a comprehensive thermal two-dimensional finite-element model which takes several heat sources into account. The influence of these different heat sources on the two-dimensional temperature distribution in the laser array has been investigated. The power densities of the heat sources related to the active region were calculated by an analytic description of the temperature dependent processes as spontaneous emission, Auger recombination and interface recombination. The results of our numerical calculation show, that the local distribution of the heat sources has a strong influence on the lateral temperature profile and on the maximum temperature in the active region of the array, i.e. on the thermal resistance. The calculated temperature profiles are in a good agreement with the measured lateral temperatures at different injection currents and heat sink temperatures. The difference between calculated and measured maximum temperature is lower than 0.75"C.