High-power high-brightness 980-nm lasers based on the extended cavity surface emitting lasers concept

Strzelecka, E.; McInerney, John G.; Mooradian, A.; Lewis, Alan; Shchegrov, Andrei V.; Lee, Dicky; Watson, Jason P.; Kennedy, Keith W.; Carey, Glen P.; Zhou, Hailong; Ha, Wonill; Cantos, Brad D.; Hitchens, W.R.; Heald, David L.; Doan, Vincent V.; Lear, K.L.

doi:10.1117/12.479437

Cited by 20 publications

(10 citation statements)

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“…This can be one of factors of the thermal roll-over phenomena in the VCSELs. To obtain an excellent performance at high injection current, we designed the laser structure to minimize the detuning at the high injection current [18].…”

Section: Resultsmentioning

confidence: 99%

High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture

et al. 2012

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We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes (VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of over 380 mW and the power density of 4.9 kW/cm² have been achieved at 15 °C from the 100-μm-diameter aperture, which is the highest output characteristic ever reported for an ion implanted VCSEL. A high background suppression ratio of over 40 dB has also been obtained at the emission wavelength of 970 nm. The ion implantation technique provides an excellent current isolation in the apertures and would be a key to realize high power output from a VCSEL array.

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Section: Resultsmentioning

confidence: 99%

High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture

et al. 2012

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“…A common solution to this problem in VCSELs is a ring contact on top of the device which is sometimes implemented as an intracavity ring contact to avoid pumping through the top mirror. In an EP-VECSEL there is either no top DBR or only a lowreflection, low-resistance mirror for gain enhancement [13]. An anti-reflection (AR) coating on top of the semiconductor part of the device should be applied to reduce structural dispersion and bandwidth filtering of the device.…”

Section: N-vs P-doped Dbr and Contact Geometrymentioning

confidence: 99%

“…This is challenging because of optical losses and Joule heating in the doped layers. Nevertheless, continuous-wave (cw) EP-VECSELs have been demonstrated [11,12] and output powers of up to 900 mW have been obtained with a 150-µm device diameter in multimode operation [13]. Also, mode locking with down to 15-ps FWHM pulse width [14] and a wafer-scale EP-VECSEL with a micromirror and 10-mW cw output power have been reported [15].…”

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confidence: 99%

On the design of electrically pumped vertical-external-cavity surface-emitting lasers

et al. 2008

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Vertical-external-cavity surface-emitting lasers (VECSELs) yield an excellent beam quality in conjunction with a scalable output power. This paper presents a detailed numerical analysis of electrically pumped VECSEL (EP-VECSEL) structures. Electrical pumping is a key element for compact laser devices. We consider the optical loss, current confinement, and device resistance. The main focus of our investigation is on the achievement of an adequate radial carrier distribution for fundamental transverse mode operation. It will be shown that a trade off between the conflicting optical and electrical optimization has to be found and we derive an optimized design resulting in guidelines for the design of EP-VECSELs which are compatible with passive mode locking. Vertical-external-cavity surface-emitting lasers (VECSELs) [1] are of high scientific and industrial interest due to their large fundamental transverse mode output power, scaling with the device radius, the near diffraction limited output beam, and the suitability for intracavity frequency conversion [2] and passive mode locking [3,4]. Passive mode locking of an optically pumped VECSEL has been demonstrated with a semiconductor saturable absorber mirror (SESAM) [5] in a folded external cavity. After the first passively mode locked VECSEL was demonstrated in the year 2000 [6], the milestone of nearly 1 W average output power was achieved in 2002 with improved thermal management [7]. The pulses in the early experiments were often strongly chirped, but mode-locking dynamics in VECSELs revealed that a soliton-like pulse-shaping mechanism in the positive-dispersion regime can help to generate short pulses with low chirp. With the aid of intracavity dispersion control, it then became possible to obtain nearly transform limited picosecond pulses with record high output powers of 2.1 W at 4 GHz [4] and 1.4 W at 10 GHz [8]. The pulse width could be u Fax: +41-44-633-10-59, E-mail: keller@phys.ethz.ch significantly shortened to the sub-500-fs regime using faster SESAMs based on the ac Stark effect [9]. The vertical integration of the absorber into one monolithic structure with the gain quantum wells (QWs) is an important step towards higher pulse repetition rates with decreased cavity size and wafer-scale integration. This has been achieved for the first time and is referred to as the mode-locked integrated-externalcavity surface-emitting laser (MIXSEL) [10]. So far, all these devices have been optically pumped, which involves a more complex optical setup. Thus, an important step towards waferscale fabrication of compact ultrafast VECSELs is the design of electrically pumped VECSEL (EP-VECSEL) structures. This is challenging because of optical losses and Joule heating in the doped layers. Nevertheless, continuous-wave (cw) EP-VECSELs have been demonstrated [11,12] and output powers of up to 900 mW have been obtained with a 150-µm device diameter in multimode operation [13]. Also, mode locking with down to 15-ps FWHM pulse width [14] and a wafer-scale EP-VECSEL w...

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“…Non-uniform injection particularly favours higher-order transverse modes and reduces the transverse single mode wall-plug efficiency. Different device designs have been proposed to successfully overcome these problems in InGaAs/GaAs/AlGaAs lasers operating around 980 nm (Hadley et al 1993;Strzelecka et al 2003;Keeler et al 2005), but 1.55 µm EP-VECSEL have not been reported to our knowledge before our previous work El Kurdi et al 2004).…”

Section: Introductionmentioning

confidence: 98%

Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL

Bousseksou

Bouchoule²,

Kurdi³

et al. 2007

Opt Quant Electron

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International audienceWe report on the design, fabrication, and characterization of InP-based 1.55 μm wavelength large diameter (50 μm) electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs). The hybrid device consists of a half vertical cavity surface emitting laser (1/2-VCSEL) structure assembled with a concave dielectric external mirror. The 1/2-VCSEL is monolithically grown on InP substrate and includes a semiconductor Bragg mirror and a tunnel junction for electrical injection. Buried (BTJ) and ion implanted (ITJ) tunnel junction electrical confinement schemes are compared in terms of their thermal and electrical characteristics. Lower thermal resistance values are measured for BJT, but reduced current crowding effects and uniform current injection are evidenced for ITJ. Using the ITJ technique, we demonstrate Room-Temperature (RT) continuous-wave (CW) single transverse mode laser operation from 50-μm diameter EP-VECSEL devices. We show that the experimental laser optical output versus injected current (L–I) curves are well-reproduced by a simple analytical thermal model, consistent with the thermal resistance measurements performed on the 1/2-VCSEL structure. Our results indicate that thermal heating is the main mechanism limiting the maximum CW output power of 50-μm diameter VECSELs, rather than current injection inhomogeneity

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High-power high-brightness 980-nm lasers based on the extended cavity surface emitting lasers concept

Cited by 20 publications

References 0 publications

High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture

High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture

On the design of electrically pumped vertical-external-cavity surface-emitting lasers

Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL

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