High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture

Abstract

We report on GaAs-based high power density vertical-cavity surface-emitting laser diodes (VCSELs) with ion implanted isolated current apertures. A continuous-wave output power of over 380 mW and the power density of 4.9 kW/cm² have been achieved at 15 °C from the 100-μm-diameter aperture, which is the highest output characteristic ever reported for an ion implanted VCSEL. A high background suppression ratio of over 40 dB has also been obtained at the emission wavelength of 970 nm. The ion implantation technique provides an excellent current isolation in the apertures and would be a key to realize high power output from a VCSEL array.

Proton-implantation technique for high-power laser light

“…To explore the possibility of efficient operation of protonimplanted VCSELs with large current apertures, we prepared a proton-implanted VCSEL with a current aperture of 100 m. two devices: one with a single emitter, and another with seven hexagonally arrayed emitters with a spacing of 150 m. Figure 2 shows the injection current and output power characteristics of the single-emitter device under continuous wave operation at 15 ı C. We achieved a maximum output power and a maximum slope efficiency of over 380mW and 0.96W/A, respectively. 4 The output power density of the 100 m single emitter device was therefore estimated to be 4.9kW/cm 2 . To the best of our knowledge, this value is higher than all previous reports on high-power single VCSELs, and confirms the efficient operation of proton-implanted VCSELs with large current apertures.…”

Short-Pulse Operation of a High-Power-Density Proton-Implanted Vertical-Cavity Surface-Emitting Laser Array

“…16) In this letter, we report on a proton-implanted VCSEL array consisting of sevenarrayed emitters with 100-m-diameter current apertures. A peak output power of 40.6 W has been achieved under 100ns-pulse operation.…”

“…The temperature rise at which output power saturation starts is expected to be 60-80 K from the results of a single-emitter under CW operation. 16) It is thought that the output power is suppressed at the last part of the pulse duration, although the peak output power is not saturated. Figure 4 shows time-evolutions of output power and pulsed current.…”

Development of a high-power vertical-cavity surface-emitting laser array with ion-implanted current apertures

“…In this paper, we report on development of a high power VCSEL with proton-implanted current aperture. An output power of over 380 mW under CW operation was achieved from a single-emitter-VCSEL with the 100-μm-diameter aperture 15 . The output power density was estimated to be 4.9 kW/cm 2 , which is higher than that of any other oxide-confined VCSELs.…”