High-Power <i>Ka/Ku</i> Dual-Wideband GaN Power Amplifier With High Input Isolation and Transformer-Combined Load Design

Tao, Hongqi; Wang, Jiawen; Wang, Yi; Ma, Dongdong; Cao, Hanzhang; Wu, Wen; Huang, Tongde

doi:10.1109/lmwc.2020.3032569

Cited by 18 publications

(5 citation statements)

References 7 publications

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“…5,6 On the other hand, traditional dual-band power amplifiers suffer from low efficiency due to switch, filter, and diplexer losses. 7,8 Moreover, both power amplifiers and switches are discrete devices, and their cascading increases the difficulty of consistency.…”

Section: Introductionmentioning

confidence: 99%

“…Frequency reconfigurable power amplifiers can address these issues by utilizing multiple amplifier channels and radiofrequency (RF) switches or diplexers to switch between different operating frequencies, transforming a low‐efficiency wideband power amplifier into several narrow‐band, high‐efficiency power amplifiers that can operate in multiple frequency bands with greater harmonic suppressions 1–4 However, the frequency spacing between the two operating bands of a diplexer‐based reconfigurable power amplifier is wide, while operating bandwidth is narrow 5,6 . On the other hand, traditional dual‐band power amplifiers suffer from low efficiency due to switch, filter, and diplexer losses 7,8 . Moreover, both power amplifiers and switches are discrete devices, and their cascading increases the difficulty of consistency.…”

Section: Introductionmentioning

confidence: 99%

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Design of a highly efficient reconfigurable C/X dual‐band 15W GaN MMIC power amplifier using amplifier‐switch fusion technique

Zhang,

Tao,

Tao

et al. 2024

Micro & Optical Tech Letters

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This letter introduces the design of a highly efficient reconfigurable C/X dual‐band power amplifier (PA). Conventional dual‐band designs connect two amplifier branches for each band by a switch, whose transmitting losses will limit the efficiency of the PA. In alternative to the switching solution, the authors propose a novel design method using two branches of output matching networks (OMN) which the 5–6 and 8–12 GHz branch acting as active loads for each other, respectively. The band‐pass OMNs are applied, and parts of the passive matching components are replaced by transistors for channel selection. The proposed design has been simulated, implemented, and measured. The experimental results demonstrate a power added efficiency (PAE) of 45% at a pulsed output power (Pout) of 42 dBm in 5–6 GHz while a PAE greater than 39% at 42 dBm Pout in 8–12 GHz. Moreover, the second and third harmonics of both operating bands are compressed to −35 and −40 dBc, respectively. The proposed design technique addresses the challenges of low‐efficiency and lower‐band harmonic suppression in traditional dual‐band designs, making it suitable for application in next‐generation satellite communication and remote sensing systems.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of a highly efficient reconfigurable C/X dual‐band 15W GaN MMIC power amplifier using amplifier‐switch fusion technique

Zhang,

Tao,

Tao

et al. 2024

Micro & Optical Tech Letters

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“…With the rapid development of 5G communication, RF/ microwave components have faced high demands for working at multiple frequencies to improve spectral efficiency. And as a key component of RF/microwave systems, the PA that can operate at multiple frequencies has attracted researchers' attention, such as broadband PAs [12][13][14] and dual-band PAs [15][16][17][18][19]. Dual-band input matching network (IMN) and OMN are employed to complete designs of dual-band PAs in [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…Dual-band input matching network (IMN) and OMN are employed to complete designs of dual-band PAs in [15][16][17][18]. A dual-band PA, featuring a filter-based input diplexer and a transformer-combined OMN, is designed with two transistors [19]. Meanwhile, applying the dual-output topology to the OMN of PAs is also an effective method to implement the dual-band functionality.…”

Section: Introductionmentioning

confidence: 99%

A Dual-Band Dual-Output Filtering Power Amplifier Based on High-Selectivity Filtering Impedance Transformer

Zhen,

Wu,

et al. 2023

International Journal of RF and Microwave Computer-Aided Engine

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In this brief, a novel filtering impedance transformer with good selectivity and high termination impedance is proposed, of which close-formed design equations are derived and effectively verified. Then, a dual-band dual-output filtering power amplifier (PA) operating at 2.4-2.6 GHz and 3.4-3.6 GHz is designed based on the proposed filtering impedance transformer. The dual-band filtering PA contains a diplexer-like output matching network, which can separate two band signals into corresponding output branches. EM-simulated results of the diplexer-like output matching network show that the isolation between the two output ports is better than 30.7 dB. Finally, for demonstration, the dual-band dual-output filtering PA using a packaged 10 W transistor is fabricated, and the measured drain efficiencies are 45.3%-50.2% and 41.7%-53.2% at lower and higher bands, respectively. Also, a good dual-band filtering response is obtained. A good agreement between simulated and measured results is observed.

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“…Since the primary advantage of GaN HEMT technology is emphasized by its high-power capability, many mmWave GaN PA MMICs (monolithic microwave integrated circuits) on both silicon carbide (SiC) and silicon (Si) substrates have been previously reported [1][2][3][4][5]. Furthermore, with the emergence of the mmWave-5G market, high-performance and cost-effective multifunctional chips for both transmitter and receiver designs are in significant demand.…”

Section: Introductionmentioning

confidence: 99%

A Millimeter-Wave GaN MMIC Front End Module with 5G NR Performance Verification

Hwang

Lee

Kim

et al. 2022

J. Electromagn. Eng. Sci

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This paper proposes a millimeter-wave (mmWave) 5G front end module (FEM) based on multiple gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) with 5G new radio (NR) performance verification. The proposed structure is configured by a wide band GaN single-pole double-throw (SPDT) switch MMIC, a GaN low-noise amplifier (LNA) MMIC, and a GaN power amplifier (PA) MMIC with the target operation band from 26.5 GHz to 29.5 GHz. The LNA and PA MMICs are designed with 150 nm GaN/SiC technology, and the SPDT MMIC is designed with 100 nm GaN/Si. The LNA MMIC shows the measured noise figure less than or equal to 2.52 dB within the operation band. The PA MMIC is based on a two-stage configuration and shows about 35 dBm measured saturated power with power-added efficiency better than 34% within the operation band. Also, the SPDT MMIC is based on an artificial transmission line configuration for wideband performance and shows that the measured insertion loss is less than 1.6 dB, and the measured isolation is higher than 25 dB within the operation band. Furthermore, all MMICs are integrated within a single carrier as an FEM and successfully verified by 5G NR test signals.

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High-Power Ka/Ku Dual-Wideband GaN Power Amplifier With High Input Isolation and Transformer-Combined Load Design

Cited by 18 publications

References 7 publications

Design of a highly efficient reconfigurable C/X dual‐band 15W GaN MMIC power amplifier using amplifier‐switch fusion technique

Design of a highly efficient reconfigurable C/X dual‐band 15W GaN MMIC power amplifier using amplifier‐switch fusion technique

A Dual-Band Dual-Output Filtering Power Amplifier Based on High-Selectivity Filtering Impedance Transformer

A Millimeter-Wave GaN MMIC Front End Module with 5G NR Performance Verification

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