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An improved method to extract dynamic thermal impedance for power transistor is proposed, and the nonlinear thermal effect is considered. A novel model to characterize transistor dynamic thermal impedance is established. A four-node R-L network is attached in model to characterize self-heating. And the method to extract model parameters is given. A constant m is defined to judge the change of thermal impedance with temperature. Thermal impedance Z th can be solved through rigorous mathematical calculation. This model is validated by using an AlGaN/GaN HEMT device under different measurement conditions, which demonstrates its potential to characterize the complete dynamic self-heating behaviors for power transistors. KEYWORDS channel temperature, dynamics thermal impedance, GaN HEMTs, self-heating effect Int J Numer Model. 2019;e2599.wileyonlinelibrary.com/journal/jnm