A Compact 60W X-Band GaN HEMT Power Amplifier MMIC

X‐band 12 W power amplifier MMIC designed with second harmonic suppression

“…The output impedance of the unit power cell was modeled with R and C in parallel. The values of R and C can be derived from the method of load‐pull measurement or HB simulation with nonlinear model. In this letter, the method of HB simulation is used.…”

“…X‐Band power amplifier MMICs are critical components for electronic systems such as atmospheric radar and airborne phased array radar. Many of the papers reported excellent power and efficiency characteristics of X‐band power amplifier MMIC . However, the second harmonic suppression (SHS) was not concerned in these design.…”

“…Many of the papers reported excellent power and efficiency characteristics of X-band power amplifier MMIC. [1][2][3][4] However, the second harmonic suppression (SHS) was not concerned in these design. The SHS of the HPA designed with the conventional method is about 30dBc for full X-band, mainly due to the poor SHS of output matching network (OMN) in the 8-9 GHz band.…”

“…1,2 Several investigations have confirmed this observation. [3][4][5][6][7][8] Chalcogenide glass already exists and available for the potential applications. 5,7,[9][10][11][12][13] One of the interesting aspects of light traveling within the ChG is that the change in wavelength range from the infrared to the radio wave (or microwave) that can be used to serve the current bandwidth requirements, where the light fidelity (LiFi) and wireless fidelity (WiFi) are required to use for the increasing bandwidths, 14-17 where the individual system has been well established and available in the existing networks.…”

A 16 GS/s 3‐Bit DAC Core in GaN HEMT Technology

“…The unique properties of GaN material, such as large bandgap, high breakdown electric field, and high saturation velocity, have enabled AlGaN/GaN high electron mobility transistors (HEMTs) to get extensively developed and fielded in microwave power applications . The capability of working in harsh environments, especially the outstanding power‐handling capability of GaN HEMT, also makes it very attractive for digital as well as mixed‐signal applications, where it can be operated directly from high‐voltage rails.…”