High power LDMOS for cellular base station applications

Shindo, Masahiro; Morikawa, M.; Fujioka, T.; Nagura, K.; Kurotani, K.; Odaira, K.; Uchiyama, Takeshi; Yoshida, Isao

doi:10.1109/ispsd.2001.934568

Cited by 17 publications

(8 citation statements)

References 8 publications

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“…Lateral DMOS devices (NLDMOS) are often implemented in standard CMOS processes as high voltage devices [1][2][3][4][5][6][7][8][9]. They have advantages over vertical DMOS devices in that the drift region can be easily optimized for different operating voltage requirements, but because of the high voltages applied to these NLDMOS hot carrier (HC) degradation is a real reliability concern [10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Substrate Current Independent Hot Carrier Degradation in NLDMOS Devices

Brisbin

Lindorfer

Chaparala

2006

2006 IEEE International Reliability Physics Symposium Proceedings

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Automotive and telecom applications often require voltages in the 20-30V range. These circuits combine high performance CMOS with a high voltage MOS transistor. A possible choice for the high voltage device is an n-channel lateral DMOS transistor (NLDMOS). An advantage of an NLDMOS transistor is that it can be easily integrated within existing technologies without significant process changes. In most cases, though, the drain drift implant must be optimized to meet breakdown voltage and hot carrier reliability requirements. This paper focuses on understanding anomalous hot carrier results obtained from an NLDMOS transistor whose drain drift implant dose was varied. [

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Section: Introductionmentioning

confidence: 99%

Substrate Current Independent Hot Carrier Degradation in NLDMOS Devices

Brisbin

Lindorfer

Chaparala

2006

2006 IEEE International Reliability Physics Symposium Proceedings

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“…The tradeoff between the on-resistance (R ON ) and the breakdown voltage (V BD ) is one of the important design issues for LDMOS fabrication. Various drift region designs have been investigated to solve this tradeoff [5]- [7]. In these researches, the reduction of R ON was achieved by decreasing the resistance in drift region through optimizing the doping profile.…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact

Chen

Chiu

et al. 2013

IEEE Electron Device Lett.

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In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones.

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“…In the conventional LDMOS, there is a trade-off between the on-resistance and the breakdown voltage, as well as between the drain current and the breakdown voltage. Several researchers have proposed solutions to these trade-offs such as using a double-doped offset, 2) or a stacked or step drift region, [3][4][5] or even the strain structure. 6) As well as by changing the device process flow, the tradeoff between the on-resistance and the breakdown voltage can also be solved by optimizing the layout design.…”

Section: Introductionmentioning

confidence: 99%

Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures

Hu¹,

Chen

Huang

et al. 2007

jjap

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The DC and RF characteristics of lateral-diffused metal-oxide-semiconductor (LDMOS) transistors with different layout structures were studied. The devices were fabricated using a 0.5 mm LDMOS process. The ring and fishbone structures, which are used widely in power devices, were designed and analyzed. We found that the transconductance, on-resistance, cutoff frequency and maximum oscillation frequency were improved using the ring structure, due to a larger equivalent W=L and lower drain parasitic resistance. In addition, the self-heating effect of LDMOS transistors was also investigated by measuring the pulsed current-voltage (I-V) and pulsed RF characteristics. From the measured results, the ring structure appeared to be a better layout design for RF LDMOS transistors.

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High power LDMOS for cellular base station applications

Cited by 17 publications

References 8 publications

Substrate Current Independent Hot Carrier Degradation in NLDMOS Devices

Substrate Current Independent Hot Carrier Degradation in NLDMOS Devices

Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact

Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures

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