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The DC and RF characteristics of lateral-diffused metal-oxide-semiconductor (LDMOS) transistors with different layout structures were studied. The devices were fabricated using a 0.5 mm LDMOS process. The ring and fishbone structures, which are used widely in power devices, were designed and analyzed. We found that the transconductance, on-resistance, cutoff frequency and maximum oscillation frequency were improved using the ring structure, due to a larger equivalent W=L and lower drain parasitic resistance. In addition, the self-heating effect of LDMOS transistors was also investigated by measuring the pulsed current-voltage (I-V) and pulsed RF characteristics. From the measured results, the ring structure appeared to be a better layout design for RF LDMOS transistors.

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