Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors

Chen, Kun-Ming; Tsai, Tzu-I; Lin, Te-Sheng; Lin, Horng−Chih; Chao, Tien−Sheng; Huang, Guo-Wei; Huang, Tiao‐Yuan

doi:10.1109/led.2013.2267809

Cited by 12 publications

(7 citation statements)

References 17 publications

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“…The f T L and v eff values for flexible substrates and exfoliated MoS 2 values on a rigid substrate. Data taken from ref (right triangles) for MoS 2 FETs, ref (down triangle) for MoS 2 FETs, ref (up triangles) for MoS 2 FETs, ref (circle) for indium gallium zinc oxide (IGZO) TFTs, and ref (square) for polycrystalline silicon (poly-Si) TFTs. Reprinted with permission from ref .…”

Section: Mos2-based Flexible Fetsmentioning

confidence: 99%

Flexible Molybdenum Disulfide (MoS₂) Atomic Layers for Wearable Electronics and Optoelectronics

Singh

Kim

et al. 2019

ACS Appl. Mater. Interfaces

335

219

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Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS 2 ) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS 2 atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS 2 atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS 2 FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS 2 device structures. The photoluminescence (PL) of MoS 2 atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS 2 transistors. The review discusses the overall recent progress made in developing MoS 2 based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs. KEYWORDS: molybdenum disulfide (MoS 2 ), flexible electronics, flexible field-effect transistors (FETs), wearable organic light-emitting diode (OLED), flexible memory devices, flexible piezoelectric nanogenerators (PNGs), sensors

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Section: Mos2-based Flexible Fetsmentioning

confidence: 99%

Flexible Molybdenum Disulfide (MoS₂) Atomic Layers for Wearable Electronics and Optoelectronics

Singh

Kim

et al. 2019

ACS Appl. Mater. Interfaces

335

219

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“…Therefore, the parasitic gate capacitances also need to be considered for device design. Compared to the state-of-the-art RF planar TFTs ( f T = 17 GHz, SS ∼ 250 mV/decade), 9) better gate controllability and RF performances are obtained simultaneously in trigate devices. These results suggest the gate length of TFT can be scaled down further to get higher frequency response without suffering severe short channel effect by adopting the multi-gate structure.…”

Section: Trigate Tfts With Different S/d Extension Designsmentioning

confidence: 99%

“…In our previous conference report, 18) we have experimentally examined the dc and high-frequency characteristics of trigate poly-Si TFTs integrated in a 3D stackable circuit. Compared with the planar poly-Si TFTs, 9,19,20) our devices exhibit better gate controllability as well as higher cutoff frequency ( f T ). To further improve the high-frequency performance, we proposed a new channel layout, where the channel width increases gradually from the source side to the drain side.…”

Section: Introductionmentioning

confidence: 99%

DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

Chen

Shiao

et al. 2019

Jpn. J. Appl. Phys.

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In this paper, we present the dc and high-frequency characteristics of trigate polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) for RF applications. Trigate TFTs were fabricated using a 3D-IC process and designed with a multi-finger gate and multi-channel configuration. To obtain an optimal device design guideline, different source/drain (S/D) extension dimensions and channel layouts are investigated. We find that devices with a shorter or wider extension have higher cutoff frequencies (fT) and maximum oscillation frequencies (fmax) owing to their lower S/D resistances. In addition, the high-frequency performance can be further improved by adopting the tapered channel structure, where the channel width increases gradually from the source to the drain. For the optimal device designs, the values of fT and fmax are around 25 GHz and 30 GHz, respectively. The high fT and fmax as well as excellent gate controllability in our devices indicate the trigate poly-Si TFT could be a suitable candidate for low-cost RFIC applications.

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“…In the past decades, several low-temperature crystallization methods, including solid-phase crystallization (SPC), [8][9][10] metal-induced crystallization (MIC) 11,12 and laser crystallization, 5,[13][14][15][16] have been proposed and performed on amorphous silicon (a-Si) layers via phase transition to a polycrystalline-state. SPC is usually executed by annealing the a-Si layer in a nitrogen ambient at a sufficiently low temperature (e.g., 600 o C) for a time-duration longer than 12 h. 8,9 The SPC process is a simple and mature technology without resorting to complex fabrication tools, but it takes a long duration of time for phase transition. Furthermore, the grain sizes of the SPC poly-Si layers are relatively small (typically less than 100 nm) and thus, channel mobility is to be improved.…”

mentioning

confidence: 99%

“…Furthermore, the grain sizes of the SPC poly-Si layers are relatively small (typically less than 100 nm) and thus, channel mobility is to be improved. SPC poly-Si TFTs with a channel thickness of 100 nm has been studied in a previous report, 9 showing remarkably high cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 17 and 21 GHz, respectively, thanks to an aggressively shortened channel length (0.22 μm) in combination with self-aligned silicidation (SALICIDE) source/drain (S/D). 17 MIC was also proposed to facilitate the crystallization of a-Si at lower temperatures utilizing a metal (usually Ni) seeding layer.…”

mentioning

confidence: 99%

Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

Lee

Liu

Chen

et al. 2021

ECS J. Solid State Sci. Technol.

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In this study, we investigate the static and radio-frequency characteristics of poly-Si thin-film transistors (TFTs) with the channels treated by using either green-nanoseconds laser crystallization (GLC) or solid phase crystallization (SPC) processes. The influences of the crystallization schemes on the granular structures of the resulted poly-Si as well as the device characteristics were studied and compared. Scanning Electron Microscope observations indicate that mean grain size of the 50 nm-thick poly-Si films is approximate 70 nm following the SPC process, whereas GLC process enlarges the mean grain size to 0.5 μm. As a consequence, GLC poly-Si TFTs exhibit greatly improved electron mobility and transconductance as compared to the SPC ones. Moreover, superior high-frequency characteristics with cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 21.1 GHz and 24.1 GHz, respectively, are recorded in GLC devices with channel length of 0.26 μm.

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Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors

Cited by 12 publications

References 17 publications

Flexible Molybdenum Disulfide (MoS₂) Atomic Layers for Wearable Electronics and Optoelectronics

Flexible Molybdenum Disulfide (MoS₂) Atomic Layers for Wearable Electronics and Optoelectronics

DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

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Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors

Cited by 12 publications

References 17 publications

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries

Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

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Product

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Flexible Molybdenum Disulfide (MoS₂) Atomic Layers for Wearable Electronics and Optoelectronics

Flexible Molybdenum Disulfide (MoS₂) Atomic Layers for Wearable Electronics and Optoelectronics