High power low confinement AIGaAs/GaAs single quantum well laser diode operating in the fundamental lateral mode

Petrescu-Prahova, I.B.; Buda, M.; Iordache, G.; Karouta, F.; Smalbrugge, E.; Roer, T.G. van de; Welter, J.H.; Vleuten, W.C. van der

doi:10.1109/cleoe.1994.636309

Cited by 5 publications

(3 citation statements)

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“…Given the COD power density value p for a certain material, the available output power is (1) where is the stripe width, is the active region thickness, and is the confinement factor. Looking at (1), we easily notice that if the value of the confinement factor is decreased, the value of the output power is increased by the same factor.…”

Section: Low-confinement Conceptmentioning

confidence: 99%

“…As we can see examining (3), in order to keep a high value for the differential efficiency, a very low value of the absorption coefficient is necessary, i.e., cm for 2-4-mm device lengths. Also, the low confinement design offers the possibility of increasing the value of the stripe width operating in the fundamental lateral mode (without filamentation) due to the smaller free carriers induced antiguiding in the active region [1], [2].…”

Section: Low-confinement Conceptmentioning

confidence: 99%

“…T HE CONCEPT of "low confinement" [1], [2] for optimization of high power operation of laser diodes seems to have a very promising potential for increasing the output power from single devices by a factor of three. This concept can be also integrated with the other designs for high power operation [antiguided arrays, master oscillator power amplifier (MOPA)] leading to the further increase of the available power from semiconductor devices, with a very high market potential.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of 6-nm AlGaAs SQW low-confinement laser structures for very high-power operation

Buda

Roer

Kaufmann

et al. 1997

IEEE J. Select. Topics Quantum Electron.

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract-This paper reports experimental results on single quantum-well separate confinement heterostructures (SQW SCH) with low-confinement factor, designed for very high-power operation. The maximum power output for AR/HR coated 3-mm-long devices, measured in very short pulsed conditions (100 ns/1 kHz), from 10-m-wide stripes was as high as 6.4 W before catastrophical optical degradation. If scaled to continuous-wave (CW) conditions, this value would be 800-1100 mW, which would mean a factor of 2-2.7 times more than reported for the best devices with normal design for threshold minimization. The absorption coefficient for the symmetrical structure is as low as 1.1 cm 01 , in spite of the low trapping efficiency of carriers in the quantum well (QW). The maximum differential efficiency is 40% (both faces, uncoated devices) for symmetrical structure and 33% for the asymmetrical one (all measurements in pulsed conditions). Threshold current densities were 800 A/cm 2 for 5-mm-long devices in the symmetrical case and 2200 A/cm 2 in the asymmetrical one. The effects of inefficient carrier trapping in the QW on the threshold current densities and differential efficiency are discussed.

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Section: Low-confinement Conceptmentioning

confidence: 99%

Section: Low-confinement Conceptmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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