Asymmetric broad waveguide diode lasers (/spl lambda/ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity

Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

“…Besides, large Γ QW resulting from narrow waveguide width leads to a small equivalent transverse spot size, which restricts the maximum output power of diode lasers. [23,24] Broadened waveguides with a width of more than 1 µm can improve beam properties of the device as well, but they can cause significant decrease in output efficiency at high currents because of the quasineutral electron-hole plasma accumulating in the optical confinement layers. Furthermore, thick waveguides increases the threshold current of diode lasers due to the deteriorative opticalconfinement factor.…”

High–Power 792 nm Fiber–Coupled Semiconductor Laser

“…By adopting the asymmetric wide waveguide structure, the light field distribution of the laser is changed from the symmetric distribution centered on the quantum well to the asymmetric distribution biased towards the N-type area, so as to reduce the overlapping ratio of the light field and the highly doped P-confinement layer. As a result, the internal loss and waste heat of the laser are reduced; meanwhile, the differential quantum efficiency and the reliability are improved [11].…”

A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current

“…The insertion of doped AlAs interlayers can change the energy band profiles for both injected electrons and holes, making them with relatively low energies to cross barrier easier and meanwhile diminishing the carrier overflow. Finally, an asymmetric double barrier may confine a larger part of optical field in the n-type region and then reduce carrier absorption in the p-cladding layer, which contributes to a lower threshold current [13,14].…”