High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Liu, Yuxian; Yang, Gaowen; Wang, Zhenfu; Li, Te; Song, Tianming; Zhao, Yongjiang; Lan, Yu; Demir, Abdullah

doi:10.1016/j.optlastec.2021.107145

Cited by 21 publications

(12 citation statements)

References 30 publications

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“…3 (a) and 3 (b). By linear fitting the data of 5 points for each length, the internal quantum efficiency ηi, internal optical loss αi, transparency current density Jtr, and modal gain coefficient can be determined according to the equations [29]: where the uncoated facet reflectivity R1 and R2 are assumed to be 0.32. The internal quantum efficiency ηi is 275% for the 3cavity LDs, equivalent to 92% for each cavity on average.…”

Section: Laser Characterization Resultsmentioning

confidence: 99%

Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

Zhao

Yang

Zhao³

et al. 2022

IEEE Photonics J.

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We report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulation and experiments to realize a high peak current density of 7.7×10 4 A/cm 2 and a low specific resistance of 1.5×10 -5 Ωcm 2 with a high n-doping concentration of 6×10 19 cm -3 . Employing a low-loss epitaxial structure design, single-, double-, and triple-cavity structure laser diodes demonstrated power scaling by epitaxial stacking. Triplecavity laser diodes have a low optical loss (0.42 cm -1 ) and generate a peak power of 83 W with a short cavity length of 750 µm at a limited current of 30 A.

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Section: Laser Characterization Resultsmentioning

confidence: 99%

Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

Zhao

Yang

Zhao³

et al. 2022

IEEE Photonics J.

Self Cite

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“…In this paper, we employed a high-efficiency GaAs-based epitaxial structure with a single quantum well (QW) active region [19,20]. Fabricated GaAs-based 915 nm LDs have 100 µm waveguides with a total cavity length (laser and window sections) of 5.0 mm.…”

Section: Facet Temperature Measurement Setupmentioning

confidence: 99%

Multisection waveguide method for facet temperature reduction and improved reliability of high-power laser diodes

Ebadi

Liu

Sünnetçioglu

et al. 2022

Semiconductor Lasers and Laser Dynamics X

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Catastrophic optical mirror damage (COMD) limits the output power and reliability of lasers diodes (LDs). Laser selfheating together with facet absorption of output power cause the facet to reach a critical temperature (Tc), resulting in COMD and irreversible device failure. The self-heating of the laser contributes significantly to the facet temperature, but it has not been addressed so far. We implement a multi-section waveguide method where the heat is separated from reaching the output facet by exploiting an electrically isolated window. The laser waveguide is divided into two electrically isolated laser and transparent window sections. The laser section is pumped at high current levels to achieve laser output, and the passive waveguide is biased at low injection currents to obtain a transparent waveguide with negligible heat generation. Using this design, we demonstrate facet temperatures lower than the junction temperature of the laser even at high output power operation. While standard LDs show COMD failures, the multi-section waveguide LDs are COMD-free. Our technique and results provide a pathway for high-reliability LDs, which would find diverse applications in semiconductor lasers.

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“…Along with the rapid development of fiber lasers, high power and PCE have become more critical to provide a cost-effective laser diode. To increase the output power [9,10] and power conversion efficiency [11], epitaxial design methods [12][13][14][15], epitaxial growth technologies [16,17], facet reliability against COMD [18][19][20][21], and passivation technologies [8,22,23] have been greatly improved. Increasing the reliable output power and PCE are always fundamental pursuits in research and practical applications.…”

Section: Introductionmentioning

confidence: 99%

48W continuous-wave output power with high efficiency from a single emitter laser diode at 915nm

Yang,

Liu,

Zhao

et al. 2023

High-Power Diode Laser Technology XXI

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High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Cited by 21 publications

References 30 publications

Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm

Multisection waveguide method for facet temperature reduction and improved reliability of high-power laser diodes

48W continuous-wave output power with high efficiency from a single emitter laser diode at 915nm

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