High power pulsed magnetron sputtering: A method to increase deposition rate

Raman, Priya; Shchelkanov, Ivan; McLain, Jake; Ruzic, D. N.

doi:10.1116/1.4916108

Cited by 27 publications

(10 citation statements)

References 25 publications

(24 reference statements)

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“…Several attempts have been made to increase the deposition rate in HiPIMS. This includes varying the pulse length [15][16][17], varying the magnetic field strength |B| [13,18,19], modifying the magnetic field geometry [20][21][22], adding an external magnetic field in the target vicinity [23], chopping the pulse into a train of shorter pulses [24,25], and increasing the target temperature [26]. Several of these reports propose that modifying the magnetic field, using either permanent magnets or electromagnets [13,18,19,27], is one of the most promising approaches.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

Hajihoseini

Čada

Hubička

et al. 2019

Plasma

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We explored the effect of magnetic field strength | B | and geometry (degree of balancing) on the deposition rate and ionized flux fraction F flux in dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) when depositing titanium. The HiPIMS discharge was run in two different operating modes. The first one we refer to as “fixed voltage mode” where the cathode voltage was kept fixed at 625 V while the pulse repetition frequency was varied to achieve the desired time average power (300 W). The second mode we refer to as “fixed peak current mode” and was carried out by adjusting the cathode voltage to maintain a fixed peak discharge current and by varying the frequency to achieve the same average power. Our results show that the dcMS deposition rate was weakly sensitive to variations in the magnetic field while the deposition rate during HiPIMS operated in fixed voltage mode changed from 30% to 90% of the dcMS deposition rate as | B | decreased. In contrast, when operating the HiPIMS discharge in fixed peak current mode, the deposition rate increased only slightly with decreasing | B | . In fixed voltage mode, for weaker | B | , the higher was the deposition rate, the lower was the F flux . In the fixed peak current mode, both deposition rate and F flux increased with decreasing | B | . Deposition rate uniformity measurements illustrated that the dcMS deposition uniformity was rather insensitive to changes in | B | while both HiPIMS operating modes were highly sensitive. The HiPIMS deposition rate uniformity could be 10% lower or up to 10% higher than the dcMS deposition rate uniformity depending on | B | and in particular the magnetic field topology. We related the measured quantities, the deposition rate and ionized flux fraction, to the ionization probability α t and the back attraction probability of the sputtered species β t . We showed that the fraction of the ions of the sputtered material that escape back attraction increased by 30% when | B | was reduced during operation in fixed peak current mode while the ionization probability of the sputtered species increased with increasing | B | , due to increased discharge current, when operating in fixed voltage mode.

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Section: Introductionmentioning

confidence: 99%

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

Hajihoseini

Čada

Hubička

et al. 2019

Plasma

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“…Altering the magnet pack with one specifically designed for HIPIMS can increase this rate even more [13] and can even exceed the DC sputtering rate for some cases.…”

Section: Deposition Ratementioning

confidence: 99%

Enhanced High Power Impulse Magnetron Sputter Processes

Gaines

2019

Vak Forsch Prax

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Summary High power impulse magnetron sputtering (HIPMS) has emerged as a useful approach for depositing highly dense and smooth coatings of electrically conductive materials. Recent advances in power supply technology have further enabled HIPMS through the addition of a positive kick in the pulse cycle which supplies a bias at the surface of the sputter target which expels sputter target ions and sends more charged adatoms toward the substrate. This has been demonstrated with critical materials like diamond‐like carbon and plasmonic materials. Material specific pulse magnitudes and durations can be developed to achieve new novel thin film morphologies.

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“…Generally, a DC power supply is usually used to sputter conducting target, while RF power supply is required for insulator or semiconductor target [13,14].…”

Section: -Introductionmentioning

confidence: 99%

Effect of Electrodes Separation in DC Plasma Sputtering on Morphology of Silver Coated Samples

Yahya¹,

Rasheed²

2016

JNUS

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In this work, the effect of the electrodes separation on plasma parameters and morphology properties for coated glass samples by silver metal using low voltage DC discharge plasma sputtering source. At fixed argon gas pressure 0.2 mbar and discharge currents I d (20,30,40,50 and 60)mA, for different electrodes separation d (3,4,4.5,5,6)cm was studied. The plasma sputtering source consists of a cylindrical chamber including two circular electrodes made from stainless steel. The cathode electrode is carrying the silver metal as a target and permanent magnet, while a glass sample coater is placed on the anode electrode. The plasma parameters: temperature of electron(T e) and ion density(n i) were determined by using cylindrical single Langmuir probe. Also, the surface morphology for the coater samples were studied by atomic force microscope (AFM). The results of this work shown that a linear increases in ions density and an exponential decreasing in electron temperature for different electrodes separation. Furthermore, the relationship between the average grain diameter and average grain height as a function of electrodes separation are nonlinear. The minimum average grain diameter is (90 nm) at d=4 cm for I d =40 mA and minimum average grain height is (5.5 nm) at the same electrodes separation and discharge current. When the temperature of electron increased, the values of average grain diameter increased while the values of average grain height decreased.

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High power pulsed magnetron sputtering: A method to increase deposition rate

Abstract: Articles you may be interested inMethod to control deposition rate instabilities-High power impulse magnetron sputtering deposition of TiO2

Cited by 27 publications

References 25 publications

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge

Enhanced High Power Impulse Magnetron Sputter Processes

Effect of Electrodes Separation in DC Plasma Sputtering on Morphology of Silver Coated Samples

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