High-power quantum-dot lasers at 1100 nm

Heinrichsdorff, F.; Ribbat, C.; Grundmann, Marius; Bimberg, D.

doi:10.1063/1.125816

Cited by 116 publications

(30 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is almost a factor of two lower than what has been achieved for QW lasers [54]. InAs QD laser diodes with high light output power of 3 W at 1.1 lm and 4.7 W at 1.135 lm were also reported [55,56].…”

Section: Quantum Dot Lasersmentioning

confidence: 69%

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini

2006

Nanoscale Res Lett

View full text Add to dashboard Cite

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use selforganized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

show abstract

Section: Quantum Dot Lasersmentioning

confidence: 69%

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini

2006

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…34 In addition, the alteration of strain at the HfO 2 ∕GaAs interface (possibly from thermal matching to tensile strained GaAs surface region) at elevated annealing temperatures could also play a role in suppressing the interdiffusion process. 27 15 Alternatively, SAQDs deposited with the SrTiO 3 film are found to be a highly effective cap for intermixing suppression, as depicted in Fig. 3(b).…”

Section: Plasma-enhanced Chemical Vapor Depositionmentioning

confidence: 97%

“…11 Also, the overlapping transition energies of the intermixed region broadens the emission bandwidth for various broadband applications such as biomedical imaging, 12 optical communications, and so on. 13 Furthermore, the wavelength window of ∼1060─1200 nm is garnering attention because of its multitude of applications, e.g., as a source for pumping solid-state lasers, 14 visible light generation, 15,16 laser-based gas sensing, 17 metrology, and so on. Hence, an intermixed InAs/GaAs QD laser in this wavelength range would be a promising candidate to challenge the currently dominant InGaAs(N)/GaAs multiple quantum well (QW) lasers and Nd-YAG-based solid-state lasers.…”

Section: Introductionmentioning

confidence: 99%

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

et al. 2015

View full text Add to dashboard Cite

Abstract. We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO 2 and Si 3 N 4 films, HfO 2 and SrTiO 3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV ) is obtained for HfO 2 capped sample. Likewise, investigation of TiO 2 , Al 2 O 3 , and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ∼1060─1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green-yellow-orange coherent light generation, as well as addressing photonic integration via areaselective, and postgrowth bandgap engineering.

show abstract

“…Over the past 15 years there has been intense research on quantum dots (QDs) and the associated growth conditions [1], [2], [3] and [4], due to their potential for improved optoelectronic components, such as lasers [5], [6] and [7], semiconductor optical amplifiers [8] and quantum dot infrared photodetectors (QDIP) [9] and [10]. Important advantages of QD lasers are reduced threshold currents and higher temperature stability, while the main advantages of QDIPs, when compared to quantum well infrared photodetectors (QWIPs), are reduced dark current and the possibility to detect radiation at normal incidence.…”

Section: Introductionmentioning

confidence: 99%

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Höglund

Petrini

Asplund

et al. 2006

Applied Surface Science

View full text Add to dashboard Cite

A route towards optimisation of uniformity and density of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy (MOVPE) through successive variations of the growth parameters is reported. It is demonstrated that a key parameter in obtaining a high density of quantum dots is the V/III ratio, a fact which was shown to be valid when either AsH 3 (arsine) or tertiary-butyl-arsine (TBA) were used as group V precursors. Once the optimum V/III ratio was found, the size distribution was further improved by adjusting the nominal thickness of deposited InAs material, resulting in an optimum thickness of 1.8 monolayers of InAs in our case. The number of coalesced dots was minimised by adjusting the growth interruption time to approximately 30 s. Further, the uniformity was improved by increasing the growth temperature from 485 °C to 520 °C. By combining these optimised parameters, i.e. a growth temperature of 520 °C, 1.8 monolayers InAs thickness, 30 s growth stop time and TBA as group V precursor, a full-width-half-maximum (FWHM) of the low temperature luminescence band of 40 meV was achieved, indicating a narrow dot size distribution.

show abstract

High-power quantum-dot lasers at 1100 nm

Cited by 116 publications

References 17 publications

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Contact Info

Product

Resources

About