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Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a self-organized way on a GaAs(100) surface upon deposition of 1.2 nm GaSb followed by a GaAs cap layer. Plan-view transmission electron microscopy studies reveal well developed rectangular-shaped GaSb islands with a lateral extension of ∼20 nm. Intense photoluminescence (PL) is observed at an energy lower than the GaSb wetting layer luminescence. This line is attributed to radiative recombination of 0D holes located in the GaSb dots and electrons located in the surrounding regions. The GaSb quantum dot PL dominates the spectrum up to high excitation densities and up to room temperature.

We report on quantum dot ͑QD͒ lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth of defect-free binary InAs/GaAs QDs with high lateral density (d l у4ϫ10 10 cm Ϫ2) was achieved in a narrow growth parameter window. The room-temperature photoluminescence ͑PL͒ intensity is enhanced up to a factor of 3 and the PL peak width is reduced by more than 30% when a thin layer of In 0.3 Ga 0.7 As is deposited onto the InAs QDs. A QD laser with a single sheet of such InAs/InGaAs/GaAs QDs exhibits threshold current densities as low as 12.7 and 181 A/cm 2 at 100 and 300 K, respectively. Lasers with threefold stacked QDs show ground-state lasing and allow for cw operation at room temperature.

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