Radiative states in type-II GaSb/GaAs quantum wells

Ledentsov, N. N.; Böhrer, J.; Beer, M.; Heinrichsdorff, F.; Grundmann, Marius; Bimberg, D.; Ivanov, S. V.; Meltser, B. Ya.; Шапошников, С. В.; Yassievich, I. N.; Faleev, N. N.; Kop’ev, P. S.; Alfërov, Zh. I.

doi:10.1103/physrevb.52.14058

Cited by 214 publications

(136 citation statements)

References 21 publications

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“…Such dipole layers have been predicted and studied by other groups in ZnSeTe multilayers and type-II GaSb/GaAs quantum wells. 48,49 The total temporal red shifts 1 R and 3 R of the TR-PL for samples 1 and 3 was determined from the sum of the two energy parameters in the bi-exponential fit of the peak position energy described above. …”

Section: Resultsmentioning

confidence: 99%

Time-resolved magnetophotoluminescence studies of magnetic polaron dynamics in type-II quantum dots

et al. 2015

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We used continuous wave photoluminescence (cw-PL) and time resolved photoluminescence (TR-PL) spectroscopy to compare the properties of magnetic polarons (MP) in two related spatially indirect II-VI epitaxially grown quantum dot systems. In the ZnTe/(Zn,Mn)Se system the holes are confined in the non-magnetic ZnTe quantum dots (QDs), and the electrons reside in the magnetic (Zn,Mn)Se matrix. On the other hand, in the (Zn,Mn)Te/ZnSe system, the holes are confined in the magnetic (Zn,Mn)Te QDs, while the electrons remain in the surrounding nonmagnetic ZnSe matrix. The magnetic polaron formation energies MP E in both systems were measured from the temporal red-shift of the band-edge emission. The magnetic polaron exhibits distinct characteristics depending on the location of the Mn ions. In the ZnTe/(Zn,Mn)Se system the magnetic polaron shows conventional behavior with MP E decreasing with increasing temperature T and increasing magnetic field B. In contrast, MP E in the (Zn,Mn)Te/ZnSe system has unconventional dependence on temperature T and magnetic field B; MP E is weakly dependent 2 on T as well as on B. We discuss a possible origin for such a striking difference in the MP properties in two closely related QD systems.

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Section: Resultsmentioning

confidence: 99%

Time-resolved magnetophotoluminescence studies of magnetic polaron dynamics in type-II quantum dots

et al. 2015

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“…1). Such a behavior has been predicted and indeed observed for Type I1 quantum structures (see e.g., Ledentsov et al, 1995 andGlaser, et al, 1996). We note that the ZnTe/ZnSe system is indeed characterized by Type II band offset.…”

Section: Photoluminescence Characterizationmentioning

confidence: 63%

Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

Tamargo¹,

Neumark²

2004

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“…The thickness of the WL is estimated to be in the range of 2-3 MLs from the WL luminescence energy. 33 From Fig. 1, we note two important points in the excitation power P dependencies of the PL spectra of S1 (T a = 380 o C) and S2 (T a = 400 o C).…”

Section: Resultsmentioning

confidence: 99%

“…33 Optical irradiation on a GaSb/GaAs type-II QW generates photo-carriers by light absorption. The photo-excited holes are accumulated in the QW, and their charge induces an electric field and forms a triangular potential for electrons outside the QW (Fig.…”

Section: B Excitation Power Dependence Of Pl Peak Energymentioning

confidence: 99%

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

et al. 2016

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We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 o C and 400 o C) and carried out PL measurements. The 20 o C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

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Radiative states in type-II GaSb/GaAs quantum wells

Cited by 214 publications

References 21 publications

Time-resolved magnetophotoluminescence studies of magnetic polaron dynamics in type-II quantum dots

Time-resolved magnetophotoluminescence studies of magnetic polaron dynamics in type-II quantum dots

Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

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