High-power quantum dot superluminescent diode with integrated optical amplifier section

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

“…However, for this QD-only SLD, as the current is further increased, the spectrum becomes dominated by the ES leading to a reduction in FWHM to a value similar to that obtained for the GS. These effects have also been observed by other groups [34–36]. Here, for the hybrid QW/QD SLD, the QD emission saturates and the emission due to the lowest energy transition of the QW gradually increases with increasing current.…”

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

“…However, for this QD-only SLD, as the current is further increased, the spectrum becomes dominated by the ES leading to a reduction in FWHM to a value similar to that obtained for the GS. These effects have also been observed by other groups [34][35][36]. Here, for the hybrid QW/QD SLD, the QD emission saturates and the emission due to the lowest energy transition of the QW gradually increases with increasing current.…”

InAs Quantum Dots of Engineered Height for Fabrication of Broadband Superluminescent Diodes

“…However, for SLDs with much broader bandwidths (wider than 150nm), the amplified spontaneous emission level is reduced resulting in lower output power (Xin et al, 2007;Guol et al, 2009). For increasing the output power in extremely broadband SLDs, integrating an optical amplifier section has been demonstrated to be a very successful approach (Wang et al, 2011).…”