High power Raman pumps based on ridge waveguide InGaAsP/InP diode lasers

Garbuzov, D.Z.; Komissar, A.; Kudryashov, Igor; Maiorov, M.; Roff, Robert; Connolly, J.C.

doi:10.1109/ofc.2003.1248292

Cited by 5 publications

(6 citation statements)

References 4 publications

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“…The first one (figure 2-a) is an ideal case where a perfect matching occurs between n eff, W MMI and L MMI according to equation (1). In figure 2 b, n eff has been varied of 6.10 -3 as compared to figure 2 a.…”

Section: ) Impact Of An Effective Index Variationmentioning

confidence: 99%

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Investigations of 14xx-nm pump lasers formed by active MMI waveguide

Guermache¹,

Voiriot²,

Jacquet³

2006

SPIE Proceedings

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Recent progress in data transmission systems requires high output power single transverse mode laser diodes for Raman and Erbium-Doped Fiber Amplifier pump sources. Several approaches have shown high output power emission up to 1 Watt for 14xx-nm InGaAsP/InP pump lasers. In these works, the design rules were mainly related to the active volume increase, through large or flared waveguides or through the use of MMI. Such designs lead to electrical and thermal resistance decrease. MMI waveguide have already demonstrated better behavior in comparison with straight active waveguide, but neither experimental comparison nor modelisations between different active MMI structures have been reported. In this work, we report on 2D-BPM simulations and experimental results between different active MMI 1x1 structures for 14xx-nm pump laser. The MMI 1x1 is a large multimode waveguide connected in both sides center by one single transverse mode waveguide. Several parameters such as p order, wavelength emission, MMI width and MMI length have been studied in order to carry out simple design rules for active MMI waveguide based lasers. Moreover, to achieve high level output power, long lasers are necessary. In this case, we also compare long laser, typically 1.2mm, formed by one long MMI waveguide or formed by several short MMI waveguide. Simulations show a better behavior for short MMI length (LMMI<250µm) and small MMI width (WMMI<10µm). As expected, experimental results are in good agreement with simulations, and the output power figure is improved using the long laser formed by several short MMI waveguide

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Section: ) Impact Of An Effective Index Variationmentioning

confidence: 99%

“…Several approaches have shown high output power emission [1][2][3], the design rules in these papers are mainly related to the active volume increase through large [1] or flared [2] waveguides or the use of MMI [3]. Such designs lead to electrical and thermal resistance decrease and slope efficiency of the Light-Current characteristic increase.…”

mentioning

confidence: 99%

Investigations of 14xx-nm pump lasers formed by active MMI waveguide

Guermache¹,

Voiriot²,

Jacquet³

2006

SPIE Proceedings

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“…Internal loss analysis in InP lasers [3] shows that the absorption by free holes in the p-InP cladding layer [4] and in the Quantum Wells (QW) are the major loss mechanisms. So far, three approaches have been used to reduce absorption losses: (i) the thickness of the undoped waveguide was increased up to 1300 nm to prevent lasing mode penetration into the p-doped cladding layer (Broad Waveguide design [3]); (ii) the stepped acceptor doping profile in p-InP cladding was used in structures with narrow waveguides [5,6]; (iii) the number of QWs was reduced from 3 to 2 in the last version of the narrow waveguide 1450 nm laser structure [6]. For the fabrication of 1850-nm emitters the approach (i) has been applied and a broad waveguide structure with a total waveguide thickness W=1000 nm ( Fig.…”

Section: Ingaasp/inp Diode Laser Materials and Device Fabricationmentioning

confidence: 99%

“…1) was grown and processed. 1450-nm emitters were fabricated from the latest version of "telecom" structures with a very thin waveguide W=60 nm [6]. In both cases the undoped waveguide consists of InGaAsP layers of two different compositions with band gaps of 1250 nm and 1100 nm, respectively (Fig.1).…”

Section: Ingaasp/inp Diode Laser Materials and Device Fabricationmentioning

confidence: 99%

“…This means that 1450 nm diode lasers have a potential for further increase in η d-max . The "pumping" InP-based laser structure can utilize a wider waveguide and provide internal optical losses lower than that achieved in the mentioned narrow waveguide telecom laser structure version [6]. The diode laser spectrum width is a factor that can be even more important for the overall efficiency of the pumping system than the diode laser efficiency itself.…”

Section: Ingaasp/inp 1450 Nm Diode Lasersmentioning

confidence: 99%

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InGaAsP/InP diode laser pumping sources for eye-safe solid-state and fiber lasers

Garbuzov

Kudryashov

Komissarov

2004

Physics and Applications of Optoelectronic Devices

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Record high power InP-based diode laser pumps operating at 1450 nm and 1850 nm have been fabricated and tested. Single-element 100 µm stripe lasers and 1 cm long arrays (both with cavity length of 2-2.5 mm) are appropriate for fiber and bulk solid-state laser pumping, respectively. The differential quantum efficiency for 1450 nm lasers was 55% and 47% for1850 nm emitters. The maximum CW output powers for 1 cm diode arrays are 42 W for 1450 nm and 14 W for 1850 nm wavelength ranges. The output photon flow (per facet) at maximum current for 1450 nm sources is 40% higher than that for commercial GaAs-based emitters, while for 1850 nm sources it is 50 % lower. A simple estimation shows that the parameters achieved for 1450 nm diode lasers could provide overall efficiency for an 1640 nm Er 3+ :YAG laser with InP-based pumping comparable with that of a GaAs laser pumped Er 3+ :YAG laser. More importantly, the expected active media overheating in the case of InP-based pumping is lower by an order of magnitude compared to a GaAs laser pumped Er 3+ :YAG laser. Data on the lifetime for InP-based diode arrays confirm that high reliability is an additional advantage of long wavelength pumps compared to traditional GaAs-based pumps.

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