High Power Ridge GaInP/AIGaInP Laser Diodes for DVD-R/RW

Ma, Biao; Cho, Soo-Haeng; Kang, Joonseok; Lee, Sang-Bum; Lee, Changyun; Shin, Youngchul; Kim, Young‐Min; Park, Yongjo

doi:10.1109/cleopr.2005.1569577

Cited by 1 publication

(1 citation statement)

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“…The present study highlights a number of defects in InGaN material introduced during growth. In the design of a LED, many layers play their role, therefore; interface of every layer may become a source of defects [12]. These layers may be named as buffer layer, cladding layer, active layer and Tensile Strain Barrier Reducing layer (TSBR) [13].…”

Section: Resultsmentioning

confidence: 99%

Deep Levels in InGaN/GaN-LEDs

Naz¹,

Imran²,

Akbar³

et al. 2015

mst

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Study of defects in a semiconducting material can help in improving the electrical and optical properties of a device based on such material. There is a general paucity of knowledge about the nature and origin of deep level defects in ternary and quaternary semiconductors in literature. It is, therefore, of interest to study defects in ternary semiconductor, InGaN-based, LEDs. By employing deep level transient spectroscopy (DLTS), at least nine defects, labeled, E1 ˗ E9 have been observed in InGaN-LEDs. Of these, seven defects E2 ˗ E8 have been characterized. Respective energy states induced by the defects within the band gap are found to be 0.61, 1.00, 1.24, 1.37, 1.46, 1.68, 2.25 eV and capture cross-sections, at infinite temperature, are 2.27×10-17 , 4.39×10-29 , 1.37×10-20 , 9.58×10-22 , 4.61×10-28 , 2.19×10-24 and 8.23×10-22 cm 2. Concentrations of the defects were estimated to be 4.6×10 4 , 2.7×10 4 , 19.2×10 4 , 6.9×10 4 , 6.9×10 4 , 5.9×10 4 and 6.3×10 4 (cm 3), respectively.

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Section: Resultsmentioning

confidence: 99%