High-power ridge-waveguide AlGaAs GRIN-SCH laser diode

Harder, C.; Buchmann, P.; Meier, Hektor

doi:10.1049/el:19860741

Cited by 85 publications

(3 citation statements)

References 8 publications

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“…1 depicts the final package which results. The laser bar is a 32-wide array of 1300-nm, InP ridge lasers on 375-km centers [3], [4]. For clarity, only 5 of the 32 lasers are shown in the drawings.…”

Section: Piece-mentioning

confidence: 99%

Assembly of laser-fiber arrays

Hall

Lane

Wang

et al. 1994

J. Lightwave Technol.

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This paper describes techniques and machinery for first-level packaging of laser-to-fiber interconnects using batch assembly and active alignment. These techniques are economical because the costs of labor-intensive processes, such as parts handling, fiber-polishing, and alignment, are shared among the many elements of the array. Using these techniques, prototype packages have been built consisting of 32-wide arrays of 1300nm lasers coupled to 32-wide arrays of single-mode fiber-optic stubs. Building the package involves three steps: 1) preparing the laser array for handling and alignment by soldering it to a metallized silicon carrier; 2) building the fiber array by stripping the fibers, placing them precisely into etched silicon V-grooves, bonding them in place, and polishing both ends; and 3) aligning the two arrays to each other using batch, active alignment. Batch alignment succeeds to the extent that each array is collinear, so the collinearity achieved in processes 1) and 2) is crucial. Typically, collinearity of f l pm or better is achieved for each array. When such arrays are batch aligned using the techniques described herein, the average coupling efficiency is about 88% as large as it would be if each laser-fiber pair were optimally aligned individually.

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Section: Piece-mentioning

confidence: 99%

Assembly of laser-fiber arrays

Hall

Lane

Wang

et al. 1994

J. Lightwave Technol.

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“…Typical threshold currents for single-QW laser diodes range between 0.5 mA and 10 mA, and typical diiferential efficiencies of the front facet are between 0.6 mW/mA and 1.1 mW/mA. % Fabrication process As described in [6], the various Al^Ga,_^As layers for the vertical carrier and photon confinement are first grown by molecular beam epitaxy on an n-doped, 2-inchdiameter GaAs substrate. A silicon-doped buffer layer (1 fim GaAs, n= I x lO'* cm"') is grown on the substrate, followed by the lower cladding layer (1.25 ^m AlyjGajjAs, « = 5 X lO" cm"').…”

Section: High-speed Quantum-well Laser Diodesmentioning

confidence: 99%

High-speed GaAs/AlGaAs optoelectronic devices for computer applications

Harder

Zeghbroeck²,

Kesler

et al. 1990

IBM J. Res. & Dev.

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We present an overview, mainly of worl< in our laboratory, of low-threshold GaAs/AIGaAs quantum-well laser diodes and GaAs metalsemiconductor-metal photodetectors-two optoelectronic devices which show good promise for use in computer-related communication. Present-day telecommunication device technology (based on InP materials) is not well suited to the requirements of optical data communication among and within computers because the computer environment is much more demanding. It imposes a higher ambient temperature on the devices, and requires denser packaging and smaller power dissipation per device, as well as a high degree of parallelism. The GaAs/AIGaAs device technology is ideally suited to this task because

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“…Fabrication: The DBR lasers were processed from an MBE grown structure consisting of an n-cladding layer, an InGaAs single quantum well (SQW), which is centred in a 300 nm-thick AlGaAs graded region, a p-cladding layer and a highly-doped GaAs cap layer. A detailed structure and basic processing steps for such ridge-type lasers have been published in [5]. The DBR lasers consist of a 400 mm-long DBR section that provides selective feedback using a first-order grating fabricated by holographic lithography with a grating period of L B ¼ 1608 Å .…”

mentioning

confidence: 99%