High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier

Abstract

Articles you may be interested inFacet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers J. Appl. Phys. 93, 1848 (2003); 10.1063/1.1531839 High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser J. Appl. Phys. 83, 5561 (1998); 10.1063/1.367390 Highpower operation of strained InGaAs/AlGaAs single quantum well lasers Appl. Phys. Lett. 59, 2642 (1991); 10.1063/1.105924 Highpower conversion efficiency in a strained InGaAs/AlGaAs quantum well laser Continuous, highpower operation of a strained InGaAs/AlGaAs quantum well laser

Single-frequency, single-spatial-mode ROW-DFB diode laser arrays

“…However, broad-area MOPA devices possess inherent instabilities due to refractive index variations induced by thermal gradients and injected carriers [6]-[SI. The position of external spherical lenses required to achieve diffraction-limited, collimated beams is drive dependent [2]- [4]. These facts may explain why there have been no reliability data available for MOPA devices after more than three years from commercial introduction.…”

“…However, single-stripe, large-aperture lasers are inherently multimodal since the number of lateral modes within a single stripe increases with aperture width. Recently, fanouttype master-oscillator power-amplifier (MOPA) devices of the "broad-area'' type have displayed watts of diffractionlimited, single-frequency power [2]-[SI. However, broad-area MOPA devices possess inherent instabilities due to refractive index variations induced by thermal gradients and injected carriers [6]-[SI.…”

Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self‐heating

“…The beam quality in the conventional tapered lasers can be improved by using beamspoilers at the RW/taper junction [11] to reflect away the backward propagating beams into the lossy, unpumped regions of the material. The effect of using a beamspoiler in a conventional tapered laser was investigated and compared against the performance of the DBR tapered laser (without a beamspoiler).…”

“…The influence of the front facet reflectivity and the taper angle on the beam quality is considered in Section 5. The improvements obtained by using a beamspoiler in the conventional lasers [11] is then discussed and compared with the performance of a standard DBR laser.…”

External cavity wavelength tunable semiconductor lasers - a review

“…Incorporating pseudomorphic In x Ga 1-x As quantum wells in an Al y Ga 1-y As-GaAs material system has resulted in a structure which allows for an increased band filling and tuning range extending to 130 nm [30] (845.4 nm < l < 975.6 nm). However, broadly tunable QW laser diodes have been mainly focused on materials which contain multiple identical wells (MQW) [33,26] including QWs with strained layers [34]. In addition, gain calculations and experiments have shown that a wider and flatter gain profile than that of a material which consists of say three identical QWs can be obtained when we use non-identical QWs [35] with different QW width or barrier height.…”