High Power, Wideband Single Crystal XBAW Technology for sub-6 GHz Micro RF Filter Applications

Vetury, R.; Hodge, Michael D.; Shealy, J.B.

doi:10.1109/ultsym.2018.8580045

Cited by 41 publications

(19 citation statements)

References 11 publications

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“…Resonators showed k eff 2 of 6.32% and 7.63%, and Q max of 1523 and 1572, respectively. In 2018, a new high-power BAW device was created on a 6-inch Si substrate with high Q max of 3685 and FOM of 222 working at 1.8 GHz ( Figure 8 a) [ 43 ]. Furthermore, experiments also confirmed that single crystal AlN devices had better power handling capabilities than AlN-based devices ( Figure 8 b).…”

Section: Methodsmentioning

confidence: 99%

“… ( a ) Q-value and figure of merit (FOM) as functions of frequency when using XBAR TM (single crystal AlN technology) [ 43 ]. ( b ) Measured power level capability of single crystal AlN and poly-crystalline AlN [ 43 ]. Reproduced with permission from [ 43 ].…”

Section: Figurementioning

confidence: 99%

“…( b ) Measured power level capability of single crystal AlN and poly-crystalline AlN [ 43 ]. Reproduced with permission from [ 43 ].…”

Section: Figurementioning

confidence: 99%

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Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

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Section: Methodsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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“…However, work on MOCVD AlN has mainly focused on using AlN as a buffer layer [25,26,27]. MOCVD has also been suggested [28] and recently used for the fabrication of AlN FBARs [13].…”

Section: Aluminum Nitride Depositionmentioning

confidence: 99%

“…Effective in-plane actuation and sensing would require the deposition of AlN on the vertical sidewalls of MEMS structures, as shown in Figure 1.1c, for which physical vapor deposition (PVD) methods, such as sputtering, are not well-suited. Chemical vapor deposition (CVD) should offer better conformal coverage [12] and high crystal quality [13]. A piezoelectric sidewall MEMS actuator structure is illustrated in Figure 1.1d.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces

Österlund

Suihkonen

Ross

et al. 2020

Journal of Crystal Growth

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Preface I am also thankful to Prof. Christoph Genzel for XSA measurements and discussions on thin film mechanics, Dr. Ulla Vainio and Dr. Ville Liljeström for their help and interesting discussions on XRD. Especially, I would like to thank my fellow doctoral students and other people working in and around the Micronova cleanroom, including Ms. Heli Seppänen, Mr. Jori Lemettinen, and Ms. Elli Leppänen, to name a few.

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Metal–Organic Chemical Vapor Deposition‐Grown AlScN for Microelectromechanical‐Based Acoustic Filter Applications

Moe

Leathersich

Carlström

et al. 2023

Physica Status Solidi (a)

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AlScN films are produced in a commercial metal–organic chemical vapor deposition (MOCVD) system modified to low‐vapor‐pressure Sc metal–organic precursors. Growth conditions are optimized for surface morphology, film stress, and piezoelectric coefficient across a range of compositions. Epitaxial structures are designed to eliminate internal tensile stresses that develop during the film growth as well as prevent surface adatom interactions unique to the MOCVD process. From these films, wide‐bandwidth resonators and filters are manufactured using a novel microelectromechanical‐based bulk acoustic wave (BAW) transfer process. When tested on‐wafer, resonators exhibit a of 10.5%, and a value of 1400. Ladder‐type RF filters using these resonators are fabricated at 6.2 GHz and show improved performance over filters fabricated using physical vapor deposition‐deposited AlScN.

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High Power, Wideband Single Crystal XBAW Technology for sub-6 GHz Micro RF Filter Applications

Cited by 41 publications

References 11 publications

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Metalorganic chemical vapor deposition of aluminum nitride on vertical surfaces

Metal–Organic Chemical Vapor Deposition‐Grown AlScN for Microelectromechanical‐Based Acoustic Filter Applications

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