High-precision micro-displacement sensor based on tunnel magneto-resistance effect

Abstract

A high-precision micro-displacement sensor based on tunnel magneto-resistance effect is reported.We designed and simulated magnetic characteristics of the sensor, and employed chip-level Au-In bonding to implement low-temperature assembly of the TMR devices. We employed the subdivision interpolation technique to enhance the resolution by translating the sine-cosine outputs of a TMR sensor into an output that varies linearly with the displacement. Simultaneously, using the multi-bridge circuit method to suppress external magnetic and geomagnetic interference. Experimental result shows that the micro-displacement sensor has a resolution of 800 nm, accuracy of 0.14$$\%$$ % and a full-scale range of up to millimeter level. This work enables a high-performance displacement sensor, and provides a significant guide for the design of a micro-displacement sensor in practical applications.

Ultracompact single-layer optical MEMS accelerometer based on evanescent coupling through silicon nanowaveguides

“…In Fig. 10d, springs and proof mass are fabricated by using back-sided deep reactive ion etching (DRIE) technique, which can keep the gap between proof mass and frame less than 10 µ m. This design solves the incompatibility in geometries between MEMS structure and silicon nanowaveguides with reasonable aspect ratio in fabrication [32][33][34] .…”