High precision temperature- and energy-dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes

Kisting, Scott; Bohn, Paul W.; Andideh, E.; Adesida, I.; Cunningham, Brian T.; Stillman, G. E.; Harris, T. D.

doi:10.1063/1.103473

Cited by 31 publications

(7 citation statements)

References 10 publications

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“…which is in very good agreement with the litterature where the thermooptic coefficient is measured at 850 nm as 3.23 • 10 −4 T by Kisting et al [53] and at 1.5 μm as 2.34 • 10 −4 T by Skauli et al [54].…”

Section: Reflectivitysupporting

confidence: 87%

Vertical electro-absorption modulator design and its integration in a VCSEL

Marigo-Lombart¹,

Calvez²,

Arnoult³

et al. 2018

J. Phys. D: Appl. Phys.

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Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry–Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.

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Section: Reflectivitysupporting

confidence: 87%

Vertical electro-absorption modulator design and its integration in a VCSEL

Marigo-Lombart¹,

Calvez²,

Arnoult³

et al. 2018

J. Phys. D: Appl. Phys.

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“…A slight increase of the refractive index with rising temperatures was observed by several authors [26][27][28]. However, neither an analytical model nor complete data sets for the refractive index of GaAs for the temperatures investigated in this paper were found in the literature.…”

Section: Materials Parametersmentioning

confidence: 51%

An experimental and theoretical study on the temperature dependence of GaAs solar cells

Philipps

Hoheisel

Gandy

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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In this paper the temperature-dependent behavior of GaAs single-junction solar cells is studied using both experimental and simulation tools. A cryostat is used to allow measurements of the external quantum efficiency (EQE) and IV curve at different temperatures with the corresponding experimental setup at Fraunhofer ISE. Two different GaAs single-junction solar cell structures are characterized in a wide temperature range between 203 K and 398 K. Through numerical modeling of the GaAs solar cells in a semiconductor simulation environment a deeper understanding of the cells' temperature-dependent behavior is obtained. A good correlation between measurement and simulation results is achieved

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“…The color changes are most likely owing to the formation of a porous GaAs layer with a lower refractive index than that of GaAs bulk. 25,26 According to Fig. 2c, metal-assisted chemical etching results in a regular array of inverted pyramidal pits with facets at 38 • to the horizontal plane owing to the anisotropic etching properties of GaAs in aqueous solution of HF-H 2 O 2 .…”

Section: Resultsmentioning

confidence: 99%

Hybrid Photovoltaic Device Based on Nanoporous GaAs by Using Ag Metal-Assisted Nanoscale Lithography

Chen

2011

J. Electrochem. Soc.

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This study presents a hybrid photovoltaic (PV) solar cell consisting of zinc phthalocyanine (ZnPc) on nanoporous gallium arsenide (GaAs) substrates (NPGSs). NPGSs with a low reflectivity are prepared by metal-assisted nanoscale lithography. Au nanoparticles (GNPs) are introduced into the nanoporous structure in organic/inorganic hybrid solar cells to enhance the perfornance of photovoltaic devices. The optimal measured parameters of the PV cell with the ITO/ZnPc + I2 + PMMA (ZIP)/GNPs/NPGS/In structure are Jsc, Voc, fill factor (FF), and power convert efficiency (PCE), which have values of 2.48 mA/cm2, 0.55 V, 0.197, and 2.69%, respectively, under irradiation by a 100 W xenon lamp.

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High precision temperature- and energy-dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes

Cited by 31 publications

References 10 publications

Vertical electro-absorption modulator design and its integration in a VCSEL

Vertical electro-absorption modulator design and its integration in a VCSEL

An experimental and theoretical study on the temperature dependence of GaAs solar cells

Hybrid Photovoltaic Device Based on Nanoporous GaAs by Using Ag Metal-Assisted Nanoscale Lithography

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