InN thin films possessing either a novel cubic or a hexagonal phase
were grown by plasma-assisted atomic layer epitaxy on an a-plane sapphire, Si(111), and GaN/sapphire templates, simultaneously.
Two ALE growth temperature windows were found between 175–185
°C and 220–260 °C, in which the growth process is
self-limiting. In the lower temperature ALE window, InN on an a-plane sapphire crystallized in a face-centered cubic lattice
with a NaCl type structure, which has never been previously reported.
InN grown on other substrates formed the more common hexagonal phase.
In the higher temperature ALE window, the InN films grown on all substrates
were of hexagonal phase. The NaCl phase and the epitaxial nature of
the InN thin films on the a-plane sapphire grown
at 183 °C are confirmed independently by X-ray diffraction, transmission
electron microscopy, and numerical simulations. These results are
very promising and demonstrate the tremendous potential for the PA-ALE
in the growth of crystalline III-N materials with novel phases unachievable
by other deposition techniques.