High pressure synthesis, structure and thermoelectric properties of BiCuChO (Ch = S, Se, Te)

Zhu, Hongyu; Su, Taichao; Li, Hongtao; Pu, Chunying; Zhou, Dawei; Zhu, Pinwen; Wang, Xin

doi:10.1016/j.jeurceramsoc.2016.10.021

Cited by 43 publications

(33 citation statements)

References 30 publications

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“…18 The deficiency of Cu 1þ was also investigated by the introduction of hole carriers. BiCu 1Àx SeO, 19,20 LaCu 1Àx SO, 21,22 and BaCuChF (Ch: chalcogen) systems 23 introduce hole carriers into the charge conductive selenide (Cu 2 Se 2 ) 2À layers and decrease the resistivity. In these samples, the Cu deficiencies exist actually and the lattice parameter monotonically changes depending on the Cu deficiencies.…”

Section: Introductionmentioning

confidence: 99%

Oxidation states and thermoelectric properties of BiCuSeO bulks fabricated under Bi or Se deficiencies in the nominal composition

Ishizawa

Yasuzato

Fujishiro

et al. 2018

Journal of Applied Physics

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We have fabricated the BiCuSeO bulks using raw materials with Bi or Se deficiencies in the nominal composition and investigated crystallographic, chemical compositional, and thermoelectric properties. Owing to the Bi or Se deficiencies in the starting composition, excessive elements and related compounds were deposited as impurity phases and the matrix phase is nearly the stoichiometric BiCuSeO phase. The electrical resistivity, q(T), of the bulks decreases and thermoelectric power, S(T), also decreases with increasing the contents of Bi or Se deficiencies in the starting composition in spite of the stoichiometric matrix phase. These results strongly suggest that, from the X-ray photoelectron spectroscopy measurements, the actual oxidation states of Bi and Cu deviate from the formal valences of stoichiometric Bi 3þ Cu 1þ Se 2À O 2À . The introduction of a small amount of Bi and Se vacancies is also suggested. As a result, mobile carriers are introduced and the q and S values are changed. The maximum thermoelectric dimensionless figure of merit of ZT ¼ 0.60 was achieved at 773 K for the Bi 1-x CuSeO samples (x ¼ 0.025 and 0.05) in the starting composition. These results are in clear contrast with the reported results for the Cu deficiency bulks. Using these results, we propose charge valence equations and the origin of the carriers in the present BiCuSeO bulks and discuss the influence of created carriers on the thermoelectric properties.Published by AIP Publishing. https://doi.

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Section: Introductionmentioning

confidence: 99%

Oxidation states and thermoelectric properties of BiCuSeO bulks fabricated under Bi or Se deficiencies in the nominal composition

Ishizawa

Yasuzato

Fujishiro

et al. 2018

Journal of Applied Physics

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“…The calculated formation energies of Cu and Bi vacancies were reported to be 0.219 and 0.238 meV per formula unit under ambient pressure, respectively, and these values increased with increasing pressure. 29) These calculated results indicate that the Cu and Bi deficiencies from the stoichiometric composition are easy to create during PLD under lower pressures. The exhausted Bi and Cu atoms might vaporize with increasing T s .…”

Section: Optimization Of Epitaxial Growthmentioning

confidence: 84%

Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Ishizawa

Fujishiro

Naito

et al. 2018

Jpn. J. Appl. Phys.

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We have grown Bi 0.9 Sr 0.1 CuSeO epitaxial thin films on MgO and SrTiO 3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2 /ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s , and Bi and Cu deficiencies in the films.

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“…Obtaining solution of Bi 3 + and Cu + in basic pH was therefore necessary prior to react with the sodium sulfide solution. According to its potential-pH diagram, the stable form of bismuth species in water in the pH range [3][4][5][6][7][8][9][10][11][12][13] is the solid Bi(OH) 3 [23] and is therefore not soluble. Tartrate anions are known to form stable complexes with various cations.…”

Section: Synthesismentioning

confidence: 99%

“…[5,6] In particular, the presence of Cu + vacancies, observed in the refinement of synchrotron and neutron diffraction data, [7,8] is believed to be responsible for its p-type conductivity. [9,10] Moreover, its stability against air and water oxidation at room temperature as well as its composition made of non-toxic, cheap elements, makes BiCuOS a good alternative compared to other currently commercialized materials such as CIGS.…”

Section: Introductionmentioning

confidence: 99%

Aqueous‐Based Low‐Temperature Synthesis and Thin‐Film Properties of Oxysulfide BiCuOS Nanoparticles

et al. 2020

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BiCuOS is a nontoxic p-type semiconductor that is a promising candidate for photoelectric applications. The formation of thin films with a good electronic transport at the grain boundaries, while avoiding thermal treatment detrimental to its chemical stability is a challenge. We have developed a chemical method for the direct synthesis of stable colloidal suspensions of BiCuOS nanoparticles from soluble precursors. These colloidal solutions were stabilized with a catechol functionalized poly-3-hexylthiophene that allows easy spin-coating deposition and favors electronic transport along the grain boundaries. Stacking of ZnO-BiCuOS layers were achieved, allowing preparation of n-p junctions. These act as rectifying diodes and are strongly photosensitive, with I ph /I dark = 85 corresponding to an enhancement of the photocurrent of more than two orders of magnitude compared to that of BiCuOS alone. This energyefficient and low-cost method is a further step in the development of new sulfide semiconductor devices.

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High pressure synthesis, structure and thermoelectric properties of BiCuChO (Ch = S, Se, Te)

Cited by 43 publications

References 30 publications

Oxidation states and thermoelectric properties of BiCuSeO bulks fabricated under Bi or Se deficiencies in the nominal composition

Oxidation states and thermoelectric properties of BiCuSeO bulks fabricated under Bi or Se deficiencies in the nominal composition

Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Aqueous‐Based Low‐Temperature Synthesis and Thin‐Film Properties of Oxysulfide BiCuOS Nanoparticles

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High pressure synthesis, structure and thermoelectric properties of BiCuChO (Ch = S, Se, Te)

Cited by 43 publications

References 30 publications

Oxidation states and thermoelectric properties of BiCuSeO bulks fabricated under Bi or Se deficiencies in the nominal composition

Oxidation states and thermoelectric properties of BiCuSeO bulks fabricated under Bi or Se deficiencies in the nominal composition

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

Aqueous‐Based Low‐Temperature Synthesis and Thin‐Film Properties of Oxysulfide BiCuOS Nanoparticles

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Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition