High-purity InP grown by gas source molecular beam epitaxy (GSMBE)

Lambert, Marc; Perales, A.; Vergnaud, R.; Starck, C.

doi:10.1016/0022-0248(90)90345-l

Cited by 28 publications

(4 citation statements)

References 5 publications

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“…These defects are present to a very small extent with decreasing growth temperature. An almost featureless surface was observed for the sample grown at 485~ Similar observations have been reported by Kawaguchi et al 35 for the metalorganic molecular beam epitaxy (MOMBE) growth of InP using red phosphorus and TEIn and by Lambert et al 12 for the GSMBE growth of InP using PH 3 and solid indium sources. Both groups suggested that the generation of these defects can be attributed to the desorption of phosphorous producing an In-rich surface.…”

Section: Resultssupporting

confidence: 71%

“…The hydrides are precracked to AS: and P2-Panish11 first reported the successful growth of GaAs and InP by GSMBE using Ga, In, AsH 3 and PH 3. Lambert et al 12 reported 77K mobilities as high as 112000 cm2/Vs and an n-type carrier concentration as low as 2 • 1014 cm-3 for InP growth using solid indium and phosphine. However, GSMBE also retains the disadvantages associated with the use of elemental group III sources including oval defects and scale-up limitations.…”

Section: Introductionmentioning

confidence: 98%

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Chemical beam epitaxial growth of inp using EDMIn and BPE

Kim

Sadwick

Stringfellow

1997

J. Electron. Mater.

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The effect of the growth temperature on the quality of InP grown by chemical beam epitaxy (CBE) using ethyldimethylindium (EDMIn) and bisphosphinoethane (BPE) are presented. The growth rate was nearly independent of growth temperature, BPE flow rate, and cracker cell temperature in the range from 700 to 900~ Smooth and mirror-like surfaces were obtained for all of the samples grown at temperatures above 465~ All of the InP samples were n-type. As the growth temperature increased, the net carrier concentration decreased and reached a minimum value of 3.2 • 10 ~ cm -3 at 485~ The electron mobility increased with increasing growth temperature, reaching values of 3630 and 21800 cm2/Vs at 300 and 77K, respectively. The photoluminescence was found to depend strongly on the growth temperature. Excitonic luminescence was detected only for growth temperatures above 465~ The intensity of the band edge emission is comparable to that of the acceptor related emission for layers grown at 465~ At 485~ the band-edge recombination is dominant and the acceptor related emission is barely observable. As the growth temperature increased from 465 to 485~ the full width at half maximum of the bound exciton peak decreased from 6.8 to 3.5 meV at 14K. This trend was consistent with the decrease in the impurity concentration deduced from the Hall effect measurements.

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Section: Resultssupporting

confidence: 71%

Section: Introductionmentioning

confidence: 98%

Chemical beam epitaxial growth of inp using EDMIn and BPE

Kim

Sadwick

Stringfellow

1997

J. Electron. Mater.

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“…However, such defects have been reported in InP layers grown by this technique. 7,8 In this work we show that the density of oval defects present in the InP layers grown by MOMBE is completely independent of the growth parameters such as the P 2 flow, growth temperature, or the growth rate. The defects are attributed entirely to the surface contamination of the substrate and can be completely eliminated by substrate cleaning.…”

mentioning

confidence: 58%

On the origin of oval defects in metalorganic molecular beam epitaxy of InP

Cotta

Hamm

Chu

et al. 1995

Applied Physics Letters

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“…6 These results are comparable to or better than reported results from vapor phase epitaxy ͑VPE͒ and metal-organic chemical vapor device ͑MOCVD͒ films. 7,8 The reproducibility of Si doping control in GSMBE grown InP is also studied. Figure 5͑a͒ shows the intentional n-type Si doping in the 77 GHz Gunn diode active region for all device wafers of this type grown so far.…”

Section: Resultsmentioning

confidence: 99%