High-$Q$  Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits

Li, Ning; Okada, Kei; Inoue, Takeshi; Hirano, Takuichi; Bu, Qinghong; Narayanan, Aravind Tharayil; Siriburanon, Teerachot; Sakane, Hitoshi; Matsuzawa, Akira

doi:10.1109/ted.2015.2403873

Cited by 20 publications

(2 citation statements)

References 16 publications

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“…The Q factor of the 3D-printed inductor in Figure g is approximately 2 in the frequency region, and the maximum operating frequency of the inductor is 1.5 GHz because of the increased effect of the parasitic capacitance over the frequency. The measured Q factor is similar to those reported in previous studies on RF inductors, although the inductance is higher in this case . The AC resistances shown in Figure h, ranging from a few tens of ohms to a few kiloohms at the examined operating frequencies, are 100 times higher than those of RF inductors fabricated on the Si substrate.…”

Section: Resultssupporting

confidence: 87%

“…The measured Q factor is similar to those reported in previous studies on RF inductors, although the inductance is higher in this case. 46 The AC resistances shown in Figure 5h, ranging from a few tens of ohms to a few kiloohms at the examined operating frequencies, are 100 times higher than those of RF inductors fabricated on the Si substrate. Because the skin effect is a dominant factor determining the high-frequency resistance, a high-Q inductor can be fabricated using an additional process to improve the surface conductivity of the nanostructures or pasting materials.…”

Section: Resultsmentioning

confidence: 89%

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Three-Dimensional Printing of Highly Conductive Carbon Nanotube Microarchitectures with Fluid Ink

et al. 2016

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Moving printed electronics to three dimensions essentially requires advanced additive manufacturing techniques yielding multifunctionality materials and high spatial resolution. Here, we report the meniscus-guided 3D printing of highly conductive multiwall carbon nanotube (MWNT) microarchitectures that exploit rapid solidification of a fluid ink meniscus formed by pulling a micronozzle. To achieve high-quality printing with continuous ink flow through a confined nozzle geometry, that is, without agglomeration and nozzle clogging, we design a polyvinylpyrrolidone-wrapped MWNT ink with uniform dispersion and appropriate rheological properties. The developed technique can produce various desired 3D microstructures, with a high MWNT concentration of up to 75 wt % being obtained via post-thermal treatment. Successful demonstrations of electronic components such as sensing transducers, emitters, and radio frequency inductors are also described herein. We expect that the technique presented in this study will facilitate selection of diverse materials in 3D printing and enhance the freedom of integration for advanced conceptual devices.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 89%

Three-Dimensional Printing of Highly Conductive Carbon Nanotube Microarchitectures with Fluid Ink

et al. 2016

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Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of-art and perspectives

Sarafis

Nassiopoulou

2017

Applied Physics Reviews

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The increasing need for miniaturization, reliability, and cost efficiency in modern telecommunications has boosted the idea of system-on-chip integration, incorporating the RF front-end circuitry and the passive elements such as RF transmission lines, inductors, antennas, and filters. However, the performance of the passive elements of these circuits is highly degraded when integrated on standard CMOS Si, due to its low resistivity. Porous silicon (PSi) has emerged as a promising local substrate material for the on-chip monolithic integration of high performance passive RF and mm-wave devices, because it combines high resistivity and low permittivity along with CMOS compatibility. This review paper aims at summarizing the obtained results so far in the above area, including transmission lines, inductors, filters, and miniaturized antennas, monolithically integrated on porous Si in a CMOS-compatible environment. In this respect, we first present the requirements for a low-loss, CMOS-compatible RF substrates and we then argue on how PSi fulfills the set requirements. Then, we present the methods used so far to extract the dielectric properties of PSi, which are necessary inputs for designing RF devices. The performance of different passive RF devices such as coplanar waveguides, inductors, filters, and antennas on the local porous Si substrate is then reviewed and compared with the performance of other state-of-the-art RF passive devices based on different technologies. Finally, we discuss the progress made so far towards the industrialization of PSi local RF substrate technology and the challenges that are currently faced towards this objective.

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10GHz Varactor-less VCO with Helium-3 Ion Irradiated Inductor

Herdian

Zhang

Narayanan

et al. 2019

2019 IEEE Asia-Pacific Microwave Conference (APMC)

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High-$Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits

Cited by 20 publications

References 16 publications

Three-Dimensional Printing of Highly Conductive Carbon Nanotube Microarchitectures with Fluid Ink

Three-Dimensional Printing of Highly Conductive Carbon Nanotube Microarchitectures with Fluid Ink

Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of-art and perspectives

10GHz Varactor-less VCO with Helium-3 Ion Irradiated Inductor

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