High Q on-chip passive components for UTSi(R) CMOS technology

Megahed, M.; Benton, R.T.; Stuber, M.; Lo, Li‐Wei; Burgener, M. L.; Wu, Xiaolan; Canyon, J.

doi:10.1109/mwsym.1998.705109

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…From [26], this current can be written as (25) where denotes use of the parallel-resistance formula and is a constant determined by channel length and carrier velocity saturation. Noting that in strong inversion , (25) reduces to (26) and can be expressed as (27) Combining (27) and (24) with (8) and 9, we find (28) which clearly illustrates the penalty of operating short-channel devices at large overdrives. An evaluation using the more precise expression in (25) for the filter's input buffer and cells yields a ratio of approximately 2, corresponding to a 3-dB degradation in FOM.…”

Section: Figure Of Merit Improvementmentioning

confidence: 76%

“…4 In addition, the efficiency defined in (5) was not 4 Resonator Q in the filter is a factor of p 2 higher than the selectivity Q listed in Table I. optimized in this implementation, further limiting the FOM obtained. To address these problems, an experimental Q-enhanced filter has been implemented in a silicon-on-insulator process with higher inductor Q [27], and with attention given to improving efficiency in the circuit design.…”

Section: Q-enhanced Lc Filter Implementationmentioning

confidence: 99%

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Dynamic range performance of on-chip rf bandpass filters

Kuhn

Nobbe

Kelly

et al. 2003

IEEE Trans. Circuits Syst. II

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Despite decades of research in developing "singlechip" radio transceivers, most commercial designs continue to rely on off-chip components for RF bandpass filtering. Implementing these filters on-chip remains nearly as challenging today as it was ten years ago due to problems in meeting system requirements. Recent advances in silicon-on-insulator IC processes targeted at RF designs, however, offer the possibility of producing commercially-viable on-chip filters in the coming years using Q-enhancement techniques. This paper reviews filter implementation alternatives and dynamic range (DR) requirements, illustrating the fundamental advantages of Q-enhanced LC filters over active, inductorless, Gm-C designs. A 900-MHz Q-enhanced filter with a 20-MHz bandwidth is reported that achieves 78-dB DR in a 1-MHz bandwidth while consuming 39 mW. While still 15-to 20-dB below performance of comparable-power amplifiers and mixers, investigations of noise figure and inductor Q illustrate how future designs can correct this deficiency, bringing DR performance into the commercially acceptable range.

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Section: Figure Of Merit Improvementmentioning

confidence: 76%

Section: Q-enhanced Lc Filter Implementationmentioning

confidence: 99%

Dynamic range performance of on-chip rf bandpass filters

Kuhn

Nobbe

Kelly

et al. 2003

IEEE Trans. Circuits Syst. II

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“…A lot of study has been done to improve the quality factors (Q) of integrated inductors. Significant improvements have been achieved by layout design [3] and using substrate materials such as GaAs [4] and Silicon-on-Sapphire (SOS) [5]. Most of these design styles prevent or diminish the eddy current flow under the on-wafer inductor.…”

Section: Introductionmentioning

confidence: 99%

On-wafer inductors for SOS-based RF ICs

Karjalainen

Ristolainen

2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546)

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The effects of additional non-metal coils under SOS inductors on the inductor properties are investigated. Ndiffusion silicon, p-diffusion silicon, and polysilicon layers are used as extra conductors. Expected measurement results are found with inductors with p-diffusion and polysilicon layers. A Q factor of 20 is measured for an SOS inductor with an additional p-diffusion coil. An inductor with an n-diffusion layer gives an unexpectedly poor Q factor of 18. The dramatic conductivity loss of n-diffusion silicon cannot be explained b j traditional temperature-mobility or frequency-mobility dependence. The conductivity loss is caused by the SOS wafer structure and it is strongest for an n-diffusion silicon layer. The number of the vias between the metal coils has an inifluence on the inductor quality. A minor decrease in inductance value and a clear increase in Q factor are found with an increased number of vias. If the number of vias is increased too much, the via resistance compensates the achieved advantages.

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