High-Q torsional mode Si triangular beam resonators encapsulated using SiGe thin film

RF MEMS and NEMS components and adsorption-desorption induced phase noise

“…The corresponding PSDs of θ, denoted with S θ,B (f), S θ,1/f (f) and S θ,AD (f), are obtained using Eqs. (11), (12), (14) and (15). The total S θ (f) is their convolution in the frequency domain, and the oscillator phase noise, which includes the influence of the AD noise, is then obtained from Eq.…”

“…Remaining problems that prevent wider practical application are: high series resistance, insufficient power handling, and significant dependence of Q on pressure (necessitates vacuum packaging). [7] (with permission of the author), b) [8], d) [9], e) [10], f) [11]), and bulk-mode resonators (c) [12], g) [13], h) [14] © IOP Publishing. Reproduced with permission.…”

“…© 2000, 2008, 2012, 2010, 2010, 2004, 2004, 2005 IEEE. Reprinted, with permission, from [8], [9], [10], [11], [12], [13], [15], [16].…”

Introduction

“…In [48,49] a poly-SiGe resonator, which could also be used as optical (heat) sensors, was presented. Recently, thin film packaging has been added into imec's poly-SiGe MEMS-last technology [50,51]. Outside of imec, also the University of California Berkley has worked on the development of SiGe structural layers for MEMS-above-CMOS applications, presenting micromachined poly-SiGe structures such as resonators [52] or a low frequency lateral comb drive [53].…”

Recent developments in reduced order modeling based on mode superposition technique

“…The u(Tref) maps displacements at reference temperature, the second term the dynamic response over time t and the third one improves accuracy for loads varying with temperature T. The torsional MEMS resonator was used as an example [10]. …”