High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy

Rendakova, S.; Ivantsov, V.; Dmitriev, V.

doi:10.4028/www.scientific.net/msf.264-268.163

Cited by 37 publications

(15 citation statements)

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“…However, the structures resulting from the transformation of MPs in the course of LPE were described only briefly and no transformation mechanism was proposed. For example, the images of healed MP in [14,15] represent circular pits 20-40 µm in diameter, much larger than any hollow-core dislocation-based micropipe could be.…”

mentioning

confidence: 99%

Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Epelbaum¹,

Filip

Winnacker

2008

Physica Status Solidi (b)

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mentioning

confidence: 99%

Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Epelbaum¹,

Filip

Winnacker

2008

Physica Status Solidi (b)

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“…All together, these results suggest that the Al solubility limit increases with temperature. Investigation of LPE (Liquid Phase Epitaxy) grown layers at temperature 1100-1300 °C in an Al based melt gave also an Al incorporation in the range 1¥10 20 to 7¥10 20 at.cm -3 , suggesting now that the solubility limit does not depend much on temperature [3,4]. Unfortunately, since the authors did not check for the possible formation of Al-based inclusions, it was not possible to conclude.…”

Section: Introductionmentioning

confidence: 91%

Probing the effect of temperature on the incorporation of Al species in a SiC matrix

Jacquier

Ferro

Zieliński

et al. 2005

phys. stat. sol. (c)

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The so-called VLS (Vapour-Liquid-Solid) mechanism in an Al-Si melt has recently demonstrated the capability to grow at low temperature single crystalline 4H-SiC layers, with a high Al content. Using the newly developed VLS technique, we have deposited several 4H-SiC layers and determined the incorporated Al level by SIMS (Secondary Ion Mass Spectroscopy). Depending on the sample, we have found that the SIMS doping level ranges from 5¥10 19 to 1¥10 21 at.cm . This is the highest value reported so far for in-situ doped SiC:Al. From TEM (Transmission Electron Microscopy) analyses we show that the layers are single crystals, with a high density of defects at the lower interface but no foreign phase inclusion. These results compare well with the ones obtained in previous works using alternative doping techniques, like ion implantation, chemical vapour deposition or sublimation. It thus suggests that Al solubility limit in SiC is rather temperature independent.

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“…[3][4][5] Research grade 35 mm and 40 mm diameter 6H-SiC 3.5° offaxis and 4H-SiC 8° off-axis wafers manufactured by Cree Research, Inc. were used as initial substrates. All experiments were done on the (0001) Si face of the SiC wafers.…”

Section: Cvd Growth On Reduced Micropipe Density Substratesmentioning

confidence: 99%

TEM investigation of silicon carbide wafers with reduced micropipe density

Saddow

Schattner

Shamsuzzoha

et al. 2000

Journal of Elec Materi

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High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy

Cited by 37 publications

References 0 publications

Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Bulk and epitaxial growth of micropipe‐free silicon carbide on basal and rhombohedral plane seeds

Probing the effect of temperature on the incorporation of Al species in a SiC matrix

TEM investigation of silicon carbide wafers with reduced micropipe density

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