High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates

Valster, A.; Liedenbaum, C.T.H.F.; Finke, M.N.; Severens, A.L.G.J.; Boermans, M.J.B.; Vandenhoudt, D. E. W.; Bulle-Lieuwma, C.W.T.

doi:10.1016/0022-0248(91)90494-p

Cited by 66 publications

(9 citation statements)

References 10 publications

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“…These differences are mainly due to the spontaneous ordering in AlGanP epilayer on 2 off substrate. The occurrence of the ordering in AlGaInP on 2 off substrate results in the broadening and red shift of the PL spectra compared to those of disordered epilayers, as reported by other groups [4,5,7]. The PL spectra of other (Al x Ga 1Àx ) 1Ày In y P layers grown on 2 and 7 off GaAs substrates present a similar dependence on the substrate misorientation.…”

Section: Article In Presssupporting

confidence: 65%

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Dong

Chua

Wang

et al. 2004

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 65%

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Dong

Chua

Wang

et al. 2004

Journal of Crystal Growth

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“…sition using the determined energy change with aluminium of 0.61x eV [2] again corrected for any confinement effects. This value has been confirmed by [6] using electroluminescence (EL) and is also in good agreement with other work [9]. The effect of pressure for one of the experimental runs using the ruby fluorescence for pressure calibration is shown in Fig.…”

Section: Methodssupporting

confidence: 87%

“…The sample studied was grown by metal-organic vapour phase epitaxy (MOVPE) on (001) orientated GaAs substrates under conditions optimised for good quality disordered growth [6]. The results of rapid thermal annealing experiments verified that this structure and others grown by the same process were highly disordered [7].…”

Section: Methodsmentioning

confidence: 92%

Accurate determination of (Al_xGa_1–x)_0.5In_0.5P alloy pressure coefficients

Harada¹,

Kobayashi²,

Prins³

et al. 2003

Physica Status Solidi (b)

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The relative pressure coefficients across the (Al x Ga 1−x ) 0.5 In 0.5 P alloy range are accurately reported for the first time as a function of the aluminium content. Low temperature continuous-wave photoluminescence (CWPL) at hydrostatic pressures up to 30 kbar was used on a specially designed sample. IntroductionThe AlGaInP system is of fundamental importance for visible solid state devices. The design and analysis of such devices however requires an accurate knowledge of the material parameters with the alloy composition and the characterisation of the growth system [1].We have previously published measurements of the band structure [2] and band offsets [3] of this material system using specially grown samples. This paper serves to complete this work with an accurate determination of the relative pressure coefficients across the alloy range. Previous determinations of pressure coefficients with aluminium content have relied on fitting data from separate experiments and samples [1], or have averaged across the range to obtain an estimate for the system [4]. The accuracy of such measurements is influenced by the pressure calibration in each experiment. By designing and growing of a suitable sample or by measuring samples together [5] errors can be reduced and accurate relative values can be determined.

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“…Although most optoelectronic devices are fabricated from rather disordered material [1,2], ordered GaInP still has the potential of achieving superior laser diodes [3,4]. An ideal ordered GaInP crystal would consist of a single sequence of Ga-rich and In-rich monolayers oriented along a [111] B direction, characterized by a certain order parameter η [5].…”

Section: Introductionmentioning

confidence: 99%

Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopy

Hahn

Geng

Ernst

et al. 1997

Superlattices and Microstructures

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CuPt B -type ordered GaInP, lattice matched to GaAs, has been grown by metal organic vapor phase epitaxy. Ordered domains and their boundaries are investigated by dark-field transmission electron microscopy. By means of stereo images, we are able to show that domain boundaries are microscopically thin. The fact that they generally appear as broad dark lines in dark-field images is due to the projection onto the image plane and does not mean that there is a disordered alloy surrounding ordered domains. This is in agreement with photoluminescence excitation spectra of ordered samples which do not show any sign of a disordered phase.

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High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates

Cited by 66 publications

References 10 publications

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Accurate determination of (Al_xGa_1–x)_0.5In_0.5P alloy pressure coefficients

Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopy

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High quality AlxGa1−x−yInyP alloys grown by MOVPE on (311) B GaAs substrates

Cited by 66 publications

References 10 publications

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD

Accurate determination of (AlxGa1–x)0.5In0.5P alloy pressure coefficients

Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopy

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Product

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Accurate determination of (Al_xGa_1–x)_0.5In_0.5P alloy pressure coefficients