High quality factor photonic resonators for nitride quantum dots

Guillet, Thierry; Mexis, Meletios; Sergent, Sylvain; Néel, Delphine; Rennesson, S.; Brimont, Christelle; Bretagnon, Thierry; Gil, Bernard; Sam-Giao, Diane; Gayral, B.; Sèmond, F.; Leroux, M.; David, S.; Checoury, X.; Boucaud, P.

doi:10.1002/pssb.201100226

Cited by 7 publications

(4 citation statements)

References 34 publications

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“…12 Being on a Si platform provides the additional possibility of integration with increasingly popular Si-based photonic components. [13][14][15] However, those reported micro-disks, being in the early stages of development, exhibited mediocre optical characteristics, including having large modal volumes giving rise to multi-mode photo-pumped lasing; rough, and non-vertical facets resulting in low quality factors of $80; most importantly, the InGaN/GaN quantum wells (MQWs) within the micro-disk were not efficient enough to support lasing at visible light range nor at room temperature. Overcoming these limitations calls for micro-disks with smooth and vertical sidewalls as well as a reduction of disk dimensions.…”

mentioning

confidence: 97%

Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si

Zhang

et al. 2014

Applied Physics Letters

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2-μm micro-disks containing InGaN/GaN quantum wells supported on a tiny Si nanotip are fabricated via microsphere lithography followed by dry and wet etch processes. The micro-disks are studied by photoluminescence at both room-temperature and 10 K. Optically pumped blue lasing at room-temperature is observed via whispering-gallery modes (WGMs) with a lasing threshold as low as 8.43 mJ/cm2. Optical resonances in the micro-disks are studied through numerical computations and finite-difference time-domain simulations. The WGMs are further confirmed through the measured broadband transmission spectrum, whose transmission minima coincide well with predicted WGM frequencies.

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confidence: 97%

Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si

Zhang

et al. 2014

Applied Physics Letters

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“…Recent progress with InGaN optical emitters include strong coupling and polariton lasing in microcavities featuring distributed Bragg reflectors (DRBs), low threshold lasing, observations of Rabi oscillations, and single-photon emission . However, in spite of such progress the quality factors in the nitrides are often more than an order of magnitude lower than other III–V systems. − This, as well as the large joint density of states of InGaN/GaN devices, causes lasing thresholds to be significantly higher than for other III–V systems. , …”

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confidence: 99%

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

et al. 2014

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In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots. Using CL to accurately count the number, and map the position, of dislocations within several individual cavities, we have found a clear correlation between the density of defects in the high-field region of a microdisk and its corresponding quality factor (Q). We discuss possible mechanisms associated with defects, photon scattering, and absorption, which could be responsible for degraded device performance.

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“…Despite such promising properties and progress, inherent chemical, structural and electrical properties of III-nitride materials present severe challenges in terms of the realisation of optical devices perhaps best evidenced by the fact quality factors for III-nitride cavities are typically at least an order of magnitude lower than in other III-V systems [33][34][35]. Challenges with cavity fabrication include the very high chemical and thermal stability of GaN and InGaN-based materials, leading to difficulties in both dry and wet-etching [36].…”

Section: Iii-nitride Microcavities: Opportunities and Challengesmentioning

confidence: 99%

Defects in III-nitride microdisk cavities

Ren¹,

Puchtler²,

Zhu³

et al. 2017

Semicond. Sci. Technol.

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Nitride microcavities offer an exceptional platform for the investigation of light-matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and lowthreshold nanolasers. Microdisk geometries in particular are attractive for low-threshold lasing applications due to their ability to support high finesse whispering gallery modes (WGMs) and small modal volumes. In this article we review the effect of defects on the properties of nitride microdisk cavities fabricated using photoelectrochemical (PEC) etching of an InGaN sacrificial superlattice (SSL). Threading dislocations originating from either the original GaN pseudosubstrate are shown to hinder the undercutting of microdisk cavities during the photoelectric chemical (PEC) etching process resulting in whiskers of unetched material on the underside of microdisks. The unetched whiskers provide a pathway for light to escape, reducing microdisk Q-factor if located in the region occupied by the WGMs. Additionally, dislocations can affect the spectral stability of quantum dot emitters, thus hindering their effective integration in microdisk cavities. Though dislocations are clearly undesirable, the limiting factor on nitride microdisk Q-factor is expected to be internal absorption, indicating that the further optimisation of nitride microdisk cavities must incorporate both the elimination of dislocations and careful tailoring of the active region emission wavelength and background doping levels.

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High quality factor photonic resonators for nitride quantum dots

Abstract: International audienc

Cited by 7 publications

References 34 publications

Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si

Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

Defects in III-nitride microdisk cavities

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