High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

Tojo, Yuki; Matsumura, Ryo; Yokoyama, Hiroyuki; Kurosawa, Masashi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu

doi:10.1063/1.4794409

Cited by 14 publications

(10 citation statements)

References 27 publications

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“…We found that, in the previous studies, the annealing conditions (temperature and time) were almost the same as those for Si or Ge. Here we report the Al-induced layer exchange 3 (ALILE) of an intermediate-composition SiGe focusing on the annealing temperature and time because those should be determined according to the SiGe composition [20]. Slow annealing below 350 °C results in a high-quality Si0.4Ge0.6 layer whose (111) orientation fraction (99%) and grain size (> 100 µm) are comparable to those of Si and Ge layers formed by ALILE [29.32].…”

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confidence: 86%

“…In the past few decades, SiGe-on-insulator (SGOI) structures have been widely investigated for use in thin-film transistors [1][2][3][4], thin-film solar cells [5,6], and on-chip optical interconnects [7,8]. A (111)-oriented SGOI is of particular interest because it works as a virtual substrate for III-V compound semiconductors [9,10] and silicide materials [11][12][13].…”

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confidence: 99%

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Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

et al. 2016

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Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions.Here we demonstrate a large-grained (> 100 µm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays.

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confidence: 86%

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Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

et al. 2016

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“…1 The tuning of the SiGe composition enables a higher carrier mobility than Si 2,3 and a large light absorption coefficient at an arbitrary wavelength. 4,5 SiGe-on-insulator (SGOI) structures have been widely investigated for use in thin-film transistors, 6,7 thin-film solar cells, 5,8 and on-chip optical interconnects. 9,10 A (111)-oriented SGOI is of particular interest because it works as a virtual substrate for III-V compound semiconductors 11,12 and silicide materials.…”

Section: Introductionmentioning

confidence: 99%

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

Toko

Kusano

Nakata

et al. 2017

Journal of Applied Physics

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A composition tunable Si 1-x Ge x alloy has a wide range of applications, including in electronic and photonic devices. We investigate the Al-induced layer exchange (ALILE) growth of amorphous Si 1-x Ge x on an insulator. The ALILE allowed Si 1-x Ge x to be large grained (> 50 lm) and highly (111)-oriented (> 95%) over the whole composition range by controlling the growth temperature (400 C). From a comparison with conventional solid-phase crystallization, we determined that such characteristics of the ALILE arose from the low activation energy of nucleation and the high frequency factor of lateral growth. The Si 1-x Ge x layers were highly p-type doped, whereas the process temperatures were low, thanks to the electrically activated Al atoms with the amount of solid solubility limit. The electrical conductivities approached those of bulk single crystals within one order of magnitude. The resulting Si 1-x Ge x layer on an insulator is useful not only for advanced SiGe-based devices but also for virtual substrates, allowing other materials to be integrated on threedimensional integrated circuits, glass, and even a plastic substrate.

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“…On rapid melting process, Ge melts and reaches the thermal equilibrium in a short time. Si at the Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing and result in Si x Ge 1− x (0 ≤ x ≤ 1) formation [ 41 , 48 ]. By further observing the peak of Ge-Ge and Si-Ge vibration modes, it was found that the frequency, ω was slightly shifted as indicated in Figure 4 .…”

Section: Resultsmentioning

confidence: 99%

The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

et al. 2014

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The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

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High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

Cited by 14 publications

References 27 publications

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange

The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

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