High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy

Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas

“…Although the epitaxial growth on (100)-GaAs substrates is a well-established process, planar growth on (111)-substrates is far from trivial. [39][40][41][42] Unlike (100)-substrates, (111)-substrates are either terminated with Ga or As atoms , labelled (111)A and (111)B respectively. Growth on (111)B-GaAs substrates requires high growth temperature and has a very narrow growth window with a rough morphology and high number of "hillocks".…”

“…The first challenging step, not shown in the figures, was the process of growth of a thin (111)-GaAs layer on an aluminum arsenide (AlAs) buffer layer on a (111)-GaAs substrate using metal–organic chemical vapor deposition (MOCVD). Although the epitaxial growth on (100)-GaAs substrates is a well-established process, planar growth on (111)-substrates is far from trivial. − Unlike (100)-substrates, (111)-substrates are either terminated with Ga or As atoms, labeled (111)­A and (111)B respectively. Growth on (111)­B-GaAs substrates requires high growth temperature and has a very narrow growth window with a rough morphology and high number of “hillocks” .…”

“…Although the epitaxial growth on (100)-GaAs substrates is a well-established process, planar growth on (111)-substrates is far from trivial. − Unlike (100)-substrates, (111)-substrates are either terminated with Ga or As atoms, labeled (111)­A and (111)B respectively. Growth on (111)­B-GaAs substrates requires high growth temperature and has a very narrow growth window with a rough morphology and high number of “hillocks” . Hence, to improve the surface morphology of the layers and to attain minimal surface roughness, we performed a growth optimization series to fine-tune the growth parameters of GaAs and AlAs (111)-layers with specular surfaces on (111)­A-GaAs substrates.…”

“…Growth on (111)B-GaAs substrates requires high growth temperature and has a very narrow growth window with a rough morphology and high number of "hillocks". 40 Hence, to improve the surface morphology of the layers and to attain minimal surface roughness, we performed a growth optimization series to fine-tune the growth parameters of GaAs and AlAs (111)-layers with specular surfaces on (111)A-GaAs substrates. The films were grown on a (111)A-GaAs wafer in a showerhead type MOCVD reactor.…”

Formation of GaAs and Ga1−xAlxAs (0 ≤ x ≤ 0.3) layers on GaAs (111)A substrate by organometallic vapor phase epitaxy

“…However, special attention is paid to the (111) A/B crystallographic plane direction since this epitaxial growth might produce devices with remarkable electrical and physical properties. The first successful approaches to the layer deposition process on the Ga-terminated or A face of GaAs (111) substrate were applied in [4][5][6][7]. A detailed mechanism of the layer deposition process and morphology studies helped to prepare a schematic diagram of the correlation between growth temperature and partial pressure of arsine [4,5].…”