The GaAs and Ga 1−x Al x As (0 ⩽ x ⩽ 0.3) epitaxial growth on GaAs (111)A substrate was carried out by organometallic vapor phase epitaxy at total pressure ∼70 Torr. The regime of quantitative modulation of trimethyl gallium, Ga(CH 3 ) 3 , gas flow was applied to optimize the atomic ratio between A III and B V , while the tangential and normal parameters of the growth rate were comparable. Deposited GaAs and Ga 1−x Al x As (0 ⩽ x ⩽ 0.3) layers with crystallographic orientation of (111)A were obtained at ∼0.1-0.2 Torr of arsine, AsH 3 , pressure and low crystallization temperature ∼570-620 °C. Proposed optimization of the B V /A III relationship and reaction conditions resulted in a smooth surface of the deposited layers. Using the technological approach, a si-GaAs/n-GaAs:Si/p-GaAlAs:Zn/p + -GaAs:Zn hetero-structure was successfully synthesized. Structural and electrical properties of the prepared epitaxial structure were studied by high-resolution x-ray diffraction and electrochemical capacitance-voltage profiling. Obtained experimental results confirmed excellent crystal and interfacial quality as well as steep transitions in charge carrier concentration through the deposited layers.

The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80—120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualitative hetero boundaries under conditions of continuous growth at changing crystallization temperature from 600—700°C has been developed. It has been determined that the crystallization of p+-AlGaAs: Zn solid solution layer on the surface of n-GaAs:Si layer, with increasing the crystallization temperature in the temperature range of 600—760°C at a rate 8—10 °C/min allows to crystallize sharp impurity boundary between the layers of p- and n-type conductivity. The method of forming sharp hetero boundaries in p-GaAs:Zn/n-GaAs:Si systems can be used for manufacturing wide range of epitaxial structures.