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The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80—120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualitative hetero boundaries under conditions of continuous growth at changing crystallization temperature from 600—700°C has been developed. It has been determined that the crystallization of p+-AlGaAs: Zn solid solution layer on the surface of n-GaAs:Si layer, with increasing the crystallization temperature in the temperature range of 600—760°C at a rate 8—10 °C/min allows to crystallize sharp impurity boundary between the layers of p- and n-type conductivity. The method of forming sharp hetero boundaries in p-GaAs:Zn/n-GaAs:Si systems can be used for manufacturing wide range of epitaxial structures.

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SThe use of Raman scattering and low temperatures photoluminescence to characterize the properties of thin n-A1GaAS films grown from Ga-Bi-Al solution-melt by LPE on SI GaAs substrates. By using these optical methods it was obtained the Al concentration dependence for A1GSAS films with change of Bi concentration and for two fixed Al concentrations.

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