<title>Raman scattering (RS) and photoluminescence (PL) study of AlGaAs films grown from Ga-Bi-Al solution melt by LPE</title>

Abstract

SThe use of Raman scattering and low temperatures photoluminescence to characterize the properties of thin n-A1GaAS films grown from Ga-Bi-Al solution-melt by LPE on SI GaAs substrates. By using these optical methods it was obtained the Al concentration dependence for A1GSAS films with change of Bi concentration and for two fixed Al concentrations.