High Quality GaAs on Si and its Application to a Solar Cell

Ohmachi, Yoshiro; Kadota, Y.; Watanabe, Yoshio; Okamoto, Hiroshi

doi:10.1557/proc-144-297

Cited by 7 publications

(16 citation statements)

References 7 publications

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“…Additionally, thin strained layers (SLs) and superlattices introduced into the bulk GaAs buffer have been shown to facilitate the annihilation of TDs and minimize the dislocation propagation into the active layers of interest. Such an approach led to one of the highest efficiencies for heteroepitaxial 1J GaAs-on-Si solar cells (Ohmachi et al 1988;Yamaguchi 2014). More recent approaches involve the growth of metamorphic graded buffers (e.g.…”

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

“…For the growth of 1J GaAs solar cell on Si, (100) Si substrates with 2˚offcut Figure 2 Cross-sectional TEM image of heteroepitaxial GaAs grown on Si using (a) only TCA , (b) TCA along with In 0.07 Ga 0.93 As SL (Takano et al 1998), reprinted with permission from Takano et al (1998) and Soga et al (1996). References Takano et al (1998) Copyright 1998, AIP Publishing LLC; Soga et al (1996) Copyright 1996, AIP Publishing LLC toward [110] were utilized (Ohmachi et al 1988). An initial 10-to 15-nm thick low temperature GaAs was grown at 400˚C, followed by the subsequent growth of~2-µm thick GaAs at 700˚C.…”

Section: Integration Approaches For Iii-v-on-si Solar Cells Heteroepimentioning

confidence: 99%

“…An initial 10-to 15-nm thick low temperature GaAs was grown at 400˚C, followed by the subsequent growth of~2-µm thick GaAs at 700˚C. Five iterations of TCA were performed at 900˚C, followed by the growth of five periods of In 0.1 Ga 0.9 As/GaAs (10 nm/10 nm) SLS and five periods of Al 0.6 Ga 0.4 As/GaAs (20 nm/100 nm) SL, prior to the growth of 1J p/n GaAs solar cell structure (Ohmachi et al 1988;Yamaguchi 2014). The 1J GaAs-on-Si solar cells realized using the combination of TCA, SLS and SL buffer demonstrated an efficiency of 20% under AM1.5g and 18.3% under AM0 conditions (at a TDD of~4.5 Â 10 6 cm −2 ), both of which are the highest efficiencies reported for heteroepitaxial 1J GaAs-on-Si solar cells (Ohmachi et al 1988;Yamaguchi 2014).…”

Section: Integration Approaches For Iii-v-on-si Solar Cells Heteroepimentioning

confidence: 99%

“…One of the inherent benefits of using step-graded Si x Ge 1-x buffer is the ability to realize high-quality, low TDD and relaxed Ge layers on Si substrate providing a "virtual" Ge platform for subsequent GaAs growth . (Ohmachi et al 1988) , reprinted with permission from Yamaguchi (2014) and Ohmachi et al (1988). Reference Yamaguchi (2014) Copyright 2014Ohmachi et al (1988).…”

Section: Si X Ge 1-x Graded Buffersmentioning

confidence: 99%

“…(Ohmachi et al 1988) , reprinted with permission from Yamaguchi (2014) and Ohmachi et al (1988). Reference Yamaguchi (2014) Copyright 2014Ohmachi et al (1988). Copyright 1988, Cambridge University Press.…”

Section: Si X Ge 1-x Graded Buffersmentioning

confidence: 99%

See 4 more Smart Citations

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

Section: Integration Approaches For Iii-v-on-si Solar Cells Heteroepimentioning

confidence: 99%

Section: Integration Approaches For Iii-v-on-si Solar Cells Heteroepimentioning

confidence: 99%

Section: Si X Ge 1-x Graded Buffersmentioning

confidence: 99%

Section: Si X Ge 1-x Graded Buffersmentioning

confidence: 99%

See 3 more Smart Citations

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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GaSb-based solar cells for multi-junction integration on Si substrates

Tournet

Parola

Vauthelin

et al. 2019

Solar Energy Materials and Solar Cells

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We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

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Topical review: pathways toward cost-effective single-junction III–V solar cells

Raj¹,

Haggrén²,

Wong³

et al. 2021

J. Phys. D: Appl. Phys.

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III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

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High Quality GaAs on Si and its Application to a Solar Cell

Cited by 7 publications

References 7 publications

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

GaSb-based solar cells for multi-junction integration on Si substrates

Topical review: pathways toward cost-effective single-junction III–V solar cells

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