High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition

Xiang, R.F.; Fang, Yutao; Dai, Jiangnan; Zhang, L.; Su, Chih‐Ying; Wu, Zhenghao; Yu, Chenhui; Xiong, Hui; Chen, C.Q.

doi:10.1016/j.jallcom.2010.10.189

Cited by 33 publications

(13 citation statements)

References 27 publications

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“…Due to lattice parameter differences, i.e. 0.3823 nm for Si (111) versus 0.3112 nm for AlN (0001) (or 0.3189 nm for GaN (0001)), the interface density of states can be very high with epitaxial growth [17]. The extensive practice of direct wafer bonding between two materials, which leads to poor interface quality with a very high density of interface states, has also proven to be infeasible for forming Si/GaN junctions of needed quality [18].…”

Section: Introductionmentioning

confidence: 99%

P-type silicon as hole supplier for nitride-based UVC LEDs

et al. 2019

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The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant, has limited the development and performance of all III-nitride-based devices, including bipolar junction transistors and light emitting diodes (LEDs). For nitride-based ultraviolet (UV) LEDs, as the Al composition increases for achieving shorter wavelengths (e.g. <280 nm) into the UVC spectral range, the p-type doping issue, which causes very inefficient hole injection, becomes more severe than ever. In this work, we report the detailed study of using p-type Si as a hole supplier for high-Al composition UVC LEDs. We first describe the method of Si/GaN junction formation, where the lattice-mismatch challenge between Si and GaN is overcome by using a 0.5 nm thick Al 2 O 3 layer at the interface. This serves as a physical separation layer between the two materials as well as a passivation, tunneling, and thermal buffer layer. High-resolution transmission electron microscope image illustrates the highquality interface between Si and GaN. We further detail the hole transport mechanism of the p-p Si/ GaN isotype junction through both simulations and experiments. The enhanced hole concentration in the AlGaN/AlN multiple quantum wells (MQWs) due to the use of p-type Si as the hole supplier is verified through comparison with conventional UVC LEDs. Finally, high-performance UVC LEDs made with AlN/AlGaN (Al: 72%) MQWs employing p-type Si as their hole suppliers are demonstrated experimentally to serve as an example of the novel hole injector strategy.

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Section: Introductionmentioning

confidence: 99%

P-type silicon as hole supplier for nitride-based UVC LEDs

et al. 2019

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“…However, most studies suggested the total thickness of graded-AlGaN buffer layer is less than 1μm for crack-free GaN grown on Si [5,[11][12][13][14], because AlGaN layer with a large thickness would relax significantly and may not exert adequate compressive stress on GaN overlayer, resulting in cracking of GaN layer [11]. In this work, a combination of 1.2 μm-thick step-graded AlGaN TLs and AlGaN superlattice layer as buffer layers…”

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confidence: 95%

Growth of compressively‐strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

Pan¹,

Xiang²,

Ni³

et al. 2016

Phys. Status Solidi C

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In this paper, crack‐free GaN films with step‐graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal‐organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively‐strained GaN layers with thickness up to 3.6 μm have been obtained on Si(111) substrates (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Efforts in this line have been focused on (i) researching modifications of parameters and/or steps in the growth process, and (ii) using additional buffer-like layers to induce the recombination of these defects. For AlGaN/GaN systems, one evident approach for reducing the dislocation density consists in increasing the GaN layer thickness [17] (this is also valid in most systems) [18], but generally better results have been achieved using low temperature AlN layers, AlN/GaN superlattices (SL) [19], Al x Ga 1 À x N where the composition x varies along the growth direction [20,21], or other interesting solutions, such as using CrN layers [22], Si d-doping [23] or even He implantation [24].…”

Section: Introductionmentioning

confidence: 99%