High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

Fertitta, K. G.; Holmes, A. L.; Ciuba, F. J.; Dupuis, R. D.; Ponce, Fernando

doi:10.1007/bf02659684

Cited by 20 publications

(6 citation statements)

References 17 publications

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“…Superior crystalline quality has been reported for GaN epilayer on GaN buffered sapphire by low-pressure chemical vapor deposition (LPCVD 60 Torr). A full width at half-maximum (fwhm) value of 37 arc sec was reported and TEM analysis revealed no stacking faults or columnar growth . The narrowest rocking curve fwhm value of 30 arc sec was reported for GaN grown by LPCVD (76 Torr) with an AlN buffer layer …”

Section: Heteroepitaxial Growth Of Group III Nitridesmentioning

confidence: 96%

Growth of Group III Nitrides. A Review of Precursors and Techniques

1996

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The AlGaInN quaternary alloy system is uniquely suited for numerous device applications because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition. Growth of epitaxial device-quality group III (Al, Ga, In) nitride films has been hindered by a lack of suitably lattice matched substrates, the large equilibrium dissociation pressure of N 2 from the nitrides at typical growth temperatures, and predeposition reactions in the commonly employed metal-organic chemical vapor (MOCVD) precursors. The most successful films have been grown at temperatures in excess of 900 °C by MOCVD. However, high growth temperatures may limit compatibility and incorporation of group III nitrides with existing fabrication technologies and devices. Attempts to lower deposition temperature include activated nitrogen sources and alternative precursors. This review will discuss improvement in film properties as a function of growth chemistry and will focus on MOCVD precursors used specifically for the growth of group III nitrides.

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Section: Heteroepitaxial Growth Of Group III Nitridesmentioning

confidence: 96%

Growth of Group III Nitrides. A Review of Precursors and Techniques

1996

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“…[3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] However, most of these bespoke models, which are devised to account for specific experimental observations, lack predictive power when applied to other systems and/or growth conditions. Generation and evolution of extended crystal defects during epitaxial growth often deviate from those predicted using classical models of Frank and Van der Merwe 1 and Matthews and Blakeslee 2 and, therefore, several alternative models have been proposed to explain the experimental data.…”

Section: Introductionmentioning

confidence: 99%

Strain and crystal defects in thin AlN/GaN structures on (0001) SiC

Faleev

Levin

2010

Journal of Applied Physics

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Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study High-resolution x-ray diffraction was used to compare strain relaxation and defect populations in thin GaN/AlN heterostructures ͑total thickness Ϸ480 nm͒ grown on ͑0001͒ SiC using metalorganic chemical vapor deposition ͑MOCVD͒ and hydride vapor epitaxy ͑HVPE͒ techniques. The results of high-resolution x-ray diffraction measurements ͑rocking curves and reciprocal space mapping͒ were corroborated using transmission electron microscopy. Differently grown films exhibited dissimilar strain relaxation and defect populations that were related to specific growth conditions. In the MOCVD films, grown under lower deposition rates, the elastic strain in the AlN and GaN layers was fully relaxed at the initial stages of the epitaxial growth yielding nearly similar densities of threading dislocation segments ͑TDS͒ in layer volumes. Additional, "secondary" elastic stresses in these layers were attributed to the excess of point defects. In the HVPE films, grown under higher ͑five to ten times͒ deposition rates, these layers were over relaxed and the density of TDS in the GaN layer was an order of magnitude larger than that in AlN. The MOCVD-grown sample was devoid of planar defects whereas the HVPE film contains significant densities of stacking faults in both GaN and AlN layers. Formation of "secondary" extended defects was interpreted in terms of creation and structural transformation of point defects during epitaxial growth. Differences in strain levels, types, and defect populations/distributions for the two heterostructures were attributed to the different growth rates for MOCVD and HVPE.

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“…Today α-GaN (hexagonal polytype with wurzite structure) can be deposited successfully by metalorganic chemical vapor deposition (MOVPE) [1] [2] [3] as well as molecular beam epitaxial (MBE) methods [4] [5] [6]. It is now the timely task to correlate differences in electro-optical properties (i.e.…”

Section: Introductionmentioning

confidence: 99%

Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates

Christiansen

Albrecht

Dorsch

et al. 1996

MRS Internet j. nitride semicond. res.

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We investigate the structure, growth morphology and the related electro-optical properties of gallium nitride (GaN) films deposited on (0001) sapphire substrates by gas source molecular beam epitaxy (GSMBE) and use transmismission electron microscopy, atomic force microscopy and scanning tunneling microscopy, photoluminescence (PL) and cathodoluminescence (CL). We find two types of specimens: one type which shows a strong UV luminescence (band-to-band transition at 358nm/3.46eV) in CL and PL and only faint yellow luminescence (Gaussian shaped CL/PL peaks at around 528nm/2.35eV), specimen ‘B’, and another type, which shows a strong UV and a comparably strong yellow luminescence, specimen ‘Y’. These two types of specimens have a rough layer surface, specimen ‘Y’ even an islanded one with, facetted hexagonal islands with a width of 1-2μm at a height of 50nm. A correlation of spectrally resolved CL images to the observed defect structure shows: (i) the yellow luminescence is homogeneously distributed over the complete specimen for ‘B’ and ‘Y’ specimens. Our investigations strongly suggest the yellow luminescence to be related to screw dislocations with , which are found randomly distributed in ‘B’ and ‘Y’ specimens with a high density of 1.3·109cm−2; (ii) the strong UV luminescence in ‘Y’ specimens is located in the troughs between adjacent surface islands, where dislocations essentially in small angle grain boundaries of edge type, i.e. with or are located; (iii) in the case of the ‘B’ specimens these dislocations are randomly distributed and so is the luminescence.

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High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

Cited by 20 publications

References 17 publications

Growth of Group III Nitrides. A Review of Precursors and Techniques

Growth of Group III Nitrides. A Review of Precursors and Techniques

Strain and crystal defects in thin AlN/GaN structures on (0001) SiC

Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates

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