We report the growth of high-quality GaN heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition. These films have exhibited narrow x-ray-diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘ∼38 arc sec. These are the narrowest x-ray-diffraction rocking curve linewidths reported to date for any III-V nitride film. Electrical and optical measurements further indicate the samples to be of high quality.

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The growth and laser operation of high-quality InAlP-InGaP superlattice-active-region quantum-well heterostructure lasers on GaAs substrates are reported. These heterostructures exhibit cw room-temperature (300 K) optically pumped laser operation at wavelengths as short as λ∼586 nm (yellow, Ehν∼2.11 eV). This is the shortest wavelength room-temperature cw laser operation reported to date for any III-V material system.