Characterization of GaP / InGaP and GaP / GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition

Indium enrichment in Ga1−xInxP self-assembled quantum dots

“…In a first approximation these numerical values can be compared with energy band calculations for Ga 1Ϫx In x P for the composition range 0ϽxϽ1. 11 The relatively low numerical value of E b is in agreement with a slight Ga enrichment ͑ϳGa 0.6 In 0.4 P, extracted from Fig. 4 The relative contributions of carriers entering the quantum dots via the two entrance channels are shown separately in Fig.…”

Growth of direct bandgap GalnP quantum dots on GaP substrates

“…Hence, optoelectronic devices epitaxially grown on GaP substrates have been limited to light emitting diodes (LEDs). 4,5 The problem with this approach is that the critical layer thickness is so thin that the carriers are not easily confined to the quantum well. These two requirements are mutually exclusive for materials that can be grown on GaP.…”

AlGaAs/InGaP interfaces in structures prepared by MOVPE

“…Such a complex structure theoretically allows for more PL transitions compared with those in the previous one. We considered the band offset at a GaP/InGaP interface published in [20]. There exists a small type-I conduction band discontinuity of about 15 meV according to the paper, and so two quantum wells can be formed at the interface by inserting a GaP interlayer.…”