Indium enrichment in Ga1−xInxP self-assembled quantum dots

Johansson, Jonas; Zwiller, Valéry; Thelander, Claes; Gustafsson, Anders; Seifert, Werner; Samuelson, Lars; Svensson, Cecilia; Malm, Jan‐Olle; Falk, L.K.L.

doi:10.1063/1.1325386

Cited by 3 publications

(1 citation statement)

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“…Ga 1x In x P alloy has appealing applications in the field of electronics with high frequency and high-power. Especially, used in a transistor with high electron mobility [15], bipolar heterojunction transistors [16] and solar cells with better efficiency for space applications [17]. Also, Ga 0.5 In 0.5 P is used as a vertical cavity surface emitting laser [18] which is almost lattice-matched to GaAs.…”

Section: Introductionmentioning

confidence: 99%

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga_1-xIn_xP (x = 0.0 to 1.0) alloys

AlObaid

2022

Phys. Scr.

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Group III-V semiconductors are extensively studied for various technological applications. Different properties of Ga1-xInxP such as electronic, optical, elastic, thermal and mechanical, etc. were studied under different concentrations. However, there is no evident for thermoelectric performance of Ga1-xInxP (x = 0.0, 0.25, 0.50, 0.75 and 1.0). In the present study, we have calculated the structural, electronic and thermoelectric behavior of Ga1-xInxP by utilizing the WIEN2K package. The InP show indirect semiconductor nature of band gap of 2.1 eV. By adding the concentration of In, the band gap nature shifts from indirect to direct with a decrease in the band gap. For thermoelectric properties, Seebeck, thermal and electrical conductivity, power factor and figure of merit ZT are investigated through the BoltzTraP code. Our study reveals that Ga1-xInxP has a maximum value of ZT=0.79 at x=1, provide an opportunity for developing good thermoelectric devices.

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