Optical studies of GaInP/GaP quantum dots

Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

“…An analogous behavior has been already reported for other QDs systems [12,13] but to our knowledge, it has not been observed for InAs QDs directly capped by GaAs. In the present case, the appearance of such phenomena can be a direct consequence of the heterocapping of InAs QDs with InGaAs layer and consequent strain-driven phase separation.…”

Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yNGröning1, Pérez‐Solórzano2, Jetter3 et al. 2007Advances in OptoElectronicsSelf Cite4030View full textAdd to dashboardCite

“…This would lead to nanoislands with different composition profile. This was also previously observed for example in Ga x In 1−x P/GaP QDs, where the dots exhibit an In-rich apex surrounded by a Ga-rich base [21]. In our case, we have higher aluminium incorporation at the base than in the apex, assuming a pyramidal structure as for ternary nitride dots [22].…”

The structural and optical characterization of high areal density GaxIn1−xP quantum dots on GaP

“…Metal-organic vapor phase epitaxy (MOVPE) grown Ga x In 1−x P QDs on a GaP substrate have been rather intensively studied [3][4][5][6], while their growth by molecular beam epitaxy (MBE) was reported much less and for only a few different compositions [7]. For both growth methods rather large QDs with areal densities below 10 10 cm −2 have been reported [5,6,8,9] compared to the In x Ga 1−x As/GaAs material system which has about the same lattice mismatch of ∼7% at most.…”

“…For both growth methods rather large QDs with areal densities below 10 10 cm −2 have been reported [5,6,8,9] compared to the In x Ga 1−x As/GaAs material system which has about the same lattice mismatch of ∼7% at most. Interestingly, these Ga x In 1−x P quantum dots showed low temperature photoluminescence (PL) in the visible range between 630 and 700 nm [3,5,10]. For their potential application as active material in light-emitting diodes and particularly laser diodes, however, an increased QD areal density would be highly desirable.…”