Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yN

Abstract

The optical properties of metal-organic vapor phase epitaxy grownAlyInxGa1−x−yNquantum dot structures have been studied by time-resolved photoluminescence experiments. We investigated the recombination dynamics of the photo-exited carriers in dependence of the growth parameters such as aluminium flow and the duration of the growth interruption after the dot deposition. Our results confirm the presence of localized states, where the degree of localization is strongly dependent on the growth conditions. To describe this behavior, we propose a band structure with coupled potentials for these nanostructures. Finally, we demonstrate state filling to prove the zero-dimensional character of the strongly localized states in our quaternary quantum dots.

Pulsed layer growth of AlInGaN nanostructures

“…In the past, we have reported on the growth and optical characterization of quaternary AlInGaN thick layers, quantum wells [7] and low-dimensional nanostructures [8,9] deposited by conventional low-pressure metal-organic vapor phase epitaxy (MOVPE). The quaternary structures were controlled by varying the precursor flows.…”

Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

“…In the past, we have reported on the growth and optical characterization of quaternary AlInGaN thick layers, quantum wells [7], and low-dimensional nanostructures [8,9] deposited by conventional low-pressure metal-organic vapor-phase epitaxy (MOVPE). The quaternary structures were controlled by varying the precursor flows.…”

MOVPE grown quaternary AlInGaN layers for polarization matched quantum wells and efficient active regions

“…In the past, we have reported on the growth and optical characterization of quaternary AlInGaN thick layers, quantum wells [6], and low-dimensional nanostructures [7,8] deposited by conventional low-pressure metal-organic vapor phase epitaxy (MOVPE). The quaternary structures were controlled by varying the precursor flows.…”