High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy

Peiner, Erwin; Wehmann, H.-H.; Iber, H.; Mo, S.; Tang, Guangping; Bartels, A.; Schlachetzki, A.; Koch, Andrea U.; Dettmer, K.; Hollfelder, M.

doi:10.1016/s0022-0248(96)00736-1

Cited by 11 publications

(3 citation statements)

References 33 publications

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“…This may be accomplished by optimizing the two-dimensional growth of the nucleation layer, e.g. by starting the process with GaAs [5].…”

Section: Discussionmentioning

confidence: 99%

“…We started with a thin nucleation layer (15-40 nm) deposited at 400 • C. Subsequently, a thick functional layer (h ≈ 2 µm) was grown on top of the nucleation layer at 640 and 700 • C for InP and GaAs, respectively. For more details on the growth process, see [5]. Optical characterization of the layers was performed using PR, PL and spectroscopic ellipsometry (SE) in the spectral range around the band-gap-equivalent wavelength.…”

Section: Methodsmentioning

confidence: 99%

“…Typical etch pit patterns obtained by SEM are shown as insets in figure 2. • As a specific feature in InP/Si, large twin defects (lamellae of thickness several tens of nanometres) are observed (figure 1 and [5]). These defects are extended in the [1 10] crystal direction, acting as traps for dislocations.…”

Section: Introductionmentioning

confidence: 99%

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The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III V compound semiconductors on silicon

Peiner

Guttzeit

Wehmann

2002

J. Phys.: Condens. Matter

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The effect of threading dislocations on the optical and electrical properties of InP and GaAs heteroepitaxial layers on (001) silicon was investigated. Charged deep states act as scattering centres for electrons, thus affecting the electron mobility at low temperatures. The electric field arising from charged dislocations causes enhanced optical absorption at wavelengths near the fundamental absorption edge. The mean charge of the threading dislocations in GaAs/Si was found to be considerably higher than that for InP/Si. A model is described relating this effect to a regular arrangement of α-type 60 • dislocations at extended twin defects which were observed in InP/Si but were absent in GaAs/Si.

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“…This may be accomplished by optimizing the two-dimensional growth of the nucleation layer, e.g. by starting the process with GaAs [5].…”

Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III V compound semiconductors on silicon

Peiner

Guttzeit

Wehmann

2002

J. Phys.: Condens. Matter

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GaAs and InP on Si with InGaP Buffer Layers

Wehmann¹,

Fehly²,

Wüllner³

et al. 1998

Heterostructure Epitaxy and Devices — HEAD’97

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Epitaxial growth of Ga x In1−x As film by RF sputtering and physical properties of the films

2000

J. of Shanghai Univ.

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Single crystal Gaxlnl-xAs films have grown up on GaAs(100) substrate at 37512 and on InP(100) substrate at 39012, respectively, by the method of d-sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si( 111 ) substrates at 260 --39012, even at 46512, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the GaxIn 1 -xAs films were investigated using X-ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X-ray (EDAX), Hall measurements and spectroscopic ellipsometry.

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High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy

Cited by 11 publications

References 33 publications

The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III V compound semiconductors on silicon

The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III V compound semiconductors on silicon

GaAs and InP on Si with InGaP Buffer Layers

Epitaxial growth of Ga x In1−x As film by RF sputtering and physical properties of the films

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